Process for making and using a semiconductor wafer containing first and second DOEs of standard cell compatible, NCEM-enabled fill cells, with the first DOE including side-to-side short configured fill cells, and the second DOE including chamfer short configured fill cells

ABSTRACT

A process for making and using a semiconductor wafer includes instantiating first and second designs of experiments (DOEs), each comprised of at least two fill cells. The fill cells contain structures configured to obtain in-line data via non-contact electrical measurements (“NCEM”). The first DOE contains fill cells configured to enable non-contact (NC) detection of side-to-side shorts, and the second DOE contains fill cells configured to enable NC detection of chamfer shorts. The process may further include obtaining NC measurements from the first and/or second DOE(s) and using such measurements, at least in part, to selectively perform additional processing, metrology or inspection steps on the wafer, and/or on other wafer(s) currently being manufactured.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.15/473,547, entitled “Integrated Circuit Containing First and SecondDOEs of Standard Cell Compatible, NCEM-Enabled Fill Cells, with theFirst DOE Including Side-to-Side Short Configured Fill Cells, and theSecond DOE Including Chamfer Short Configured Fill Cells,” filed Mar.29, 2017, by applicant PDF Solutions, Inc., which '547 application isincorporated by reference herein.

The '547 application is a continuation of U.S. patent application Ser.No. 15/090,256, entitled “Integrated Circuit Containing DOEs ofNCEM-enabled Fill Cells,” filed Apr. 4, 2016, by applicant PDFSolutions, Inc., which '256 application is incorporated by referenceherein.

The '547 application is also a continuation of U.S. patent applicationSer. No. 15/090,267, entitled “Process for Making Semiconductor Dies,Chips, and Wafers Using In-Line Measurements Obtained From DOEs ofNCEM-enabled Fill Cells,” filed Apr. 4, 2016, by applicant PDFSolutions, Inc., which '267 application is incorporated by referenceherein.

The '547 application is also a continuation of U.S. patent applicationSer. No. 15/090,274, entitled “Mesh-Style NCEM Pads, and Process forMaking Semiconductor Dies, Chips, and Wafers Using In-Line Measurementsfrom Such Pads,” filed Apr. 4, 2016, by applicant PDF Solutions, Inc.,which '274 application is incorporated by reference herein.

The above-incorporated '256, '267, and '274 applications are referred toherein as the “Grandparent Applications,” while the set of figurescontained in each of the the Grandparent Applications are referred toherein as the “Grandparent FIGs.”

MASK WORK NOTICE

A portion of the disclosure of this patent document (including itsincorporated documents) contains material which is subject to mask workprotection, *M*, PDF Solutions, Inc. The mask work owner (PDF Solutions,Inc.) has no objection to the facsimile reproduction by anyone of thepatent document (including its incorporated documents) or the patentdisclosure, as it appears in the Patent and Trademark Office patent fileor records, but otherwise reserves all mask work rights whatsoever.

FIELD OF THE INVENTION

This invention relates generally to improved processes for manufacturingsemiconductor wafers and chips through use of in-line measurementsobtained via non-contact electrical measurements (“NCEM”), to on-chipstructures configured to provide useful information via NCEM, and toimplementation of NCEM structures in library compatible fill cells.

BACKGROUND OF THE INVENTION

U.S. Pat. No. 5,008,727 (“Standard cell having test pad for probing andsemiconductor integrated circuit device containing the standard cells”)to Katsura et al., incorporated by reference herein, discloses placementof a testing pad in a standard cell.

U.S. Pat. No. 6,091,249 A (“Method and apparatus for detecting defectsin wafers”) to Graham et al., incorporated by reference herein,discloses structures and methods for testing certain defects using anon-contact (“NC”) technique.

U.S. Pat. No. 6,452,412 B1 (“Drop-in test structure and methodology forcharacterizing an integrated circuit process flow and topography”) toJarvis et al., incorporated by reference herein, discloses structuresand methods for testing certain defects using an NC technique.

U.S. Pat. No. 6,949,765 B2 (“Padless structure design for easyidentification of bridging defects in lines by passive voltagecontrast”) to Song et al., incorporated by reference herein, disclosesstructures and methods for testing certain defects using an NCtechnique.

U.S. Pat. No. 7,101,722 B1 (“In-line voltage contrast determination oftunnel oxide weakness in integrated circuit technology development”) toWang et al., incorporated by reference herein, discloses structures andmethods for testing certain defects using an NC technique.

U.S. Pat. No. 7,105,436 B2 (“Method for in-line monitoring ofvia/contact holes etch process based on test structures in semiconductorwafer manufacturing”) to Zhao et al., incorporated by reference herein,discloses structures and methods for testing certain defects using an NCtechnique.

U.S. Pat. No. 7,518,190 B2 (“Grounding front-end-of-line structures on aSOI substrate”) to Cote et al., incorporated by reference herein,discloses structures and methods for testing certain defects using an NCtechnique.

U.S. Pat. No. 7,930,660 B2 (“Measurement structure in a standard cellfor controlling process parameters during manufacturing of an integratedcircuit”), to Ruderer et al., incorporated by reference herein,describes the use of test structures in fill cells for manufacturingoptimization.

U.S. Pat. No. 7,939,348 B2 (“E-beam inspection structure for leakageanalysis”), to Seng et al., incorporated by reference herein, disclosesstructures and methods for testing certain defects using an NCtechnique.

U.S. Pat. No. 8,039,837 B2 (“In-line voltage contrast detection of PFETsilicide encroachment”) to Patterson et al., incorporated by referenceherein, discloses structures and methods for testing certain defectsusing an NC technique.

U.S. Pat. No. 8,339,449 B2 (“Defect monitoring in semiconductor devicefabrication”), to Fong et al., incorporated by reference herein,discloses structures and methods for testing certain defects using an NCtechnique.

U.S. Pat. No. 8,399,266 B2 (“Test structure for detection of gap inconductive layer of multilayer gate stack”) to Mo et al., incorporatedby reference herein, discloses structures and methods for testingcertain defects using an NC technique.

U.S. Pat. No. 8,421,009 B2 (“Test structure for charged particle beaminspection and method for defect determination using the same”) to Xiao,incorporated by reference herein, discloses structures and methods fortesting certain defects using an NC technique.

U.S. Pat. No. 8,575,955 B1 (“Apparatus and method for electricaldetection and localization of shorts in metal interconnect lines”) toBrozek, incorporated by reference herein, discloses structures andmethods for testing certain defects using an NC technique.

U.S. Patent Publication 20090102501 A1 (“Test structures for e-beamtesting of systematic and random defects in integrated circuits”) toGuldi et al., incorporated by reference herein, discloses structures andmethods for testing certain defects using an NC technique.

SUMMARY OF THE INVENTION

The invention generally involves the placement of NC-testablestructures, and DOEs (Designs of Experiments) based on such structures,preferably within the “fill cells” typically used in standard cell logicregions. As used in this application, “fill cells” (or “filler cells”)refer to cells configured for placement in standard cell rows, but notconfigured to perform any logical or information storage function(s).Modern, standard-cell layouts commonly use such fill cells to relieverouting congestion. See, e.g., Cong, J., et al. “Optimizing routabilityin large-scale mixed-size placement,” ASP-DAC, 2013; and Menezes, C., etal. “Design of regular layouts to improve predictability,” Proceedingsof the 6th IEEE International Caribbean Conference on Devices, Circuitsand Systems, 2006. See also U.S. Pat. No. 8,504,969 (“Filler Cells forDesign Optimization in a Place-and-Route System”) to Lin et al.,incorporated by reference herein. As used herein “fill cells” mayinclude structures designed to perform ancillary (i.e., not logical orstorage) functions, for example, well ties and/or decoupling capacitors.

One NC measurement technique, useful in connection with certainembodiments of the invention, involves measuring or inspecting thesurface of a partially processed wafer (in-line) with a scanningelectron microscope (“SEM”) or other charged particle-basedscanning/imaging device. As the measuring/inspecting proceeds, the SEM(or other device) induces charge on all electrically floating elements,whereas any grounded elements remain at zero potential. This voltagecontrast becomes visible to the scanning/imaging device as a NCEM.

This NC measurement technique, commonly known as “voltage contrastinspection,” has been used in the semiconductor industry for many years,see, e.g., U.S. Pat. No. 6,344,750 B1 (“Voltage contrast method forsemiconductor inspection using low voltage particle beam”), and existsin many different flavors—as demonstrated by the dozens of subsequentpatents that cite the '750 patent as prior art.

U.S. patent application Ser. No. 14/612,841 (“Opportunistic placement ofIC test structures and/or e-beam target pads in areas otherwise used forfiller cells, tap cells, decap cells, scribe lines, and/or dummy fill,as well as product IC chips containing same”), filed Feb. 3, 2015, byinventors De et al., incorporated by reference herein, and owned by theassignee of the present application, discloses a number of highlyefficient—and herein preferred—methods for obtaining NCEMs from theNCEM-enabled test structures utilized in the present invention. Whilethese '841 methods represent the applicant's preferred NC measurementmethods, it is applicant's intent that usage of the terms “NCmeasurement” or “NCEM” in this application should not be limited tothese preferred methods in the absence of specific language (e.g.,“selectively targeting . . . ”, “ . . . fewer than 10 pixels”) thatindicates an intent to so limit a claim.

In general usage, the term Design of Experiments (DOE) or ExperimentalDesign refers to the design of any information-gathering exercise wherevariation is present, whether under the full control of the experimenteror not.

Experimental Design is an established field, well known to personsskilled in the art. See NIST/SEMATECH e-Handbook of Statistical Methods,http://www.itl/nist.gov/div898/handbook/, updated Oct. 30, 2013,incorporated by reference herein.

As will be apparent to the skilled reader, the typical DOE hereinrelates to an experiment involving one or more semiconductor die(s)and/or wafer(s), wherein said one or more die(s) and/or wafer(s) containmultiple instances of a substantially similar test structure, at leastsome of which vary in terms of one or more layout-related parameters(including, but not limited to, size, spacing, offset, overlap, width,extension, run length, periodicity, density, neighborhood patterning,including underlayers) or process related parameters (including, but notlimited to, dose, rate, exposure, processing time, temperature, or anytool-specifiable setting). As the person skilled in the art knows, theselection of specific parameter(s) to vary, the amount/distribution oftheir variation, and the number and location of test structures thatexpress such variation will be selected based upon the goals of theexperiment, the involved process, and the availability of appropriateplaces (e.g., fill cell locations, tap cell locations, decap celllocations, scribe line areas, etc.) to instantiate the test structures.

Preferred embodiments of the invention utilize DOEs constructed fromNCEM-enabled fill cells. In accordance with certain preferredembodiments of the invention, NCEM-enabled fill cells all have somecommon elements (e.g., height, supply rail configuration, and gatepatterning that is consistent with standard cells in the library), thenvary according to the measurement type (e.g., short, open, leakage, orresistance), layer(s) involved, and/or structure(s) to beevaluated/tested. Such NCEM-enabled fill cells also generally include apad, configured to accelerate targeted NC evaluation by, for example,determining an associated NCEM from a small number of enlarged pixels(e.g., 10 or fewer), or without creating any image at all. Such pads canbe formed from a variety of low-resistance materials and configured in avariety of shapes.

In certain preferred embodiments, such NCEM-enabled fill cells mayadditionally include two or more mask-patterned features that define arectangular test area, such test area being characterized by twoparameters (e.g., X/Y or r/θ dimensions). Additionally, for suchNCEM-enabled fill cells, an expanded test area surrounds the cell's testarea, the expanded test area being defined by a predetermined expansionof each boundary of the test area, or by predetermined proportionateexpansion of the test area's area. Alternatively, in the case of cellsdesigned to measure or characterize inter-layer effects, such test areasmay be characterized as “test volumes,” with one or more additionalparameter(s) characterizing the layers of the defining, mask-patternedfeatures.

For fill cells designed to measure, detect, or characterize electricalshort circuit behavior (so-called, “short-configured, NCEM-enabled fillcells”), the test area may represent an intended gap between twopattern-defined features that, in the absence of a manufacturinganomaly, would be electrically isolated. Alternatively, in suchshort-configured, NCEM-enabled fill cells, the test area may representan overlap between two pattern-defined features that, in the absence ofa manufacturing anomaly, would be electrically isolated. A singleshort-configured, NCEM-enabled fill cell may contain one or multipletest areas. In the case of a NCEM-enabled fill cell with multiple testareas, each of the cell's test areas is preferably wired in parallel,and each of the cell's test areas (and preferably each of its extendedtest areas, too) is identically or nearly identically configured.

Fill cells designed to measure, detect, or characterize electricalleakage behavior (so-called, “leakage-configured, NCEM-enabled fillcells”) typically resemble short-configured cells. Like theshort-configured cells, such leakage-configured cells may include a testarea that represents an intended gap between two pattern-definedfeatures that, in ideality, should be electrically isolated, but inreality, inevitably exhibit some amount of leakage. Alternatively, insuch leakage-configured, NCEM-enabled fill cells, the test area mayrepresent an overlap between two pattern-defined features that, inideality, would be electrically isolated, but in reality, inevitablyexhibit some amount of leakage. A single leakage-configured,NCEM-enabled fill cell may contain one, but preferably contains multipletest areas. In the case of a cell with multiple test areas, each of thecell's test areas is preferably wired in parallel, and each of thecell's test areas (and preferably each of its extended test areas, too)is identically or nearly identically configured.

For fill cells designed to measure, detect, or characterize electricalopen circuit behavior (so-called, “open-configured, NCEM-enabled fillcells”), the test area typically represents an intended overlap, orextension, between two pattern-defined features that, in the absence ofa manufacturing anomaly, would be electrically connected. (It may alsorepresent a single-layer pattern, such as a snake.) A singleopen-configured, NCEM-enabled fill cell may contain one or multiple testareas. In the case of multiple test areas, each of the cell's test areasis preferably connected in series, and each of the cell's test areas(and preferably each of the extended test areas, too) is identically ornearly identically configured.

Fill cells designed to measure, detect, or characterize electricalresistance behavior (so-called, “resistance-configured, NCEM-enabledfill cells”) typically resemble open-configured cells. Like theopen-configured cells, such resistance-configured cells may include atest area that represents an intended overlap, or extension, between twopattern-defined features that, in ideality, would be connected by anearly zero-resistance path, but in reality, inevitably produce ameasurable level of resistance. (Such test area may also represent asingle-layer pattern, such as a snake.) A single resistance-configured,NCEM-enabled fill cell may contain one, but preferably contains multipletest areas. In the case of multiple test areas, each of the cell's testareas is preferably connected in series, and each of the cell's testareas (and preferably each of the extended test areas, too) isidentically or nearly identically configured.

DOEs, in accordance with such preferred embodiments, comprise acollection of substantially similarly configured NCEM-enabled fillcells, in a plurality of variants. Within a given DOE, such similarlyconfigured fill cells would typically all be configured to measure,detect, or characterize the same behavior (e.g., gate-to-gate, orcontrol-element-to-control-element, shorts, for example), in the samestructural configuration (e.g., tip-to-tip, as per FIG. 14, forexample). In single-parameter DOEs, the differences between variants maybe limited to differences in the size, shape, or position of one of thefeatures that defines the cells' test area. In multi-parameter DOEs, thedifferences between variants may involve differences in two or more suchparameters. And in more complex DOEs, the differences may involve othernon-incremental changes (e.g., the presence or absence of certainfeatures, or changes in nearby or underlying patterning), either aloneor in combination with additional to single- or multi-parametervariations.

In the case of DOEs involving complex changes to nearby patterning,changes that lie within an expanded test area (an area that encompassesa predetermined expansion of the test area by, for example 50-200%, ormore) and involve either the test area-defining layer(s) or any layersthat overlap or lie immediately above or below the test area-defininglayers, are preferably limited in number. Limiting the number of suchchanges to fewer than three, five, ten, twenty, or thirty “backgroundpattern variants” facilitates analysis of data that the experimentproduces.

Another way to characterize the degree of relevant patterning variationbetween DOE variants—in certain embodiments of the invention—involvesthe concept of a pattern similarity ratio (“PSR”), whose computation ispictorially depicted in FIGS. 37-40 (and described later herein). Inaccordance with this aspect of the invention, for each variant in a DOE,there should exist another variant in the DOE that has a PSR of at least0.90 (or preferably 0.95, or more preferably 0.97) for every test-areadefining layer, and at least 0.75 (or preferably 0.85, or morepreferably 0.90) for each layer that lies immediately below any of thetest-area defining layer(s), when the expanded test areas are defined tobe at least 150-200% of the corresponding test area sizes.

Another aspect of DOEs, in accordance with the preferred embodiments, isthat they include multiple instances (e.g., 3, 5, 10, 20, 500, 100, 200,or 500+) of each NCEM-enabled fill cell variant. Furthermore, suchvariants are preferably distributed, either regularly or irregularly,throughout the space available for instantiation of fill cells.

Accordingly, generally speaking, and without intending to be limiting,one aspect of the invention relates to ICs that include, for example: astandard cell area that includes a mix of at least one thousand logiccells and fill cells of different widths and uniform heights, placedinto at least twenty adjacent rows, with at least twenty cells placedside-by-side in each row; wherein the integrated circuit includes atleast a first DOE, the first DOE comprising a plurality ofsimilarly-configured, NCEM-enabled fill cells, wherein each NCEM-enabledfill cell comprises at least: first and second elongated conductivesupply rails, formed in a connector or interconnect stack, extendingacross the entire width of the cell, and configured for compatibilitywith corresponding supply rails contained in the logic cells of thestandard cell region; a NCEM pad, formed in a conductive layer, the padbeing at least two times larger, in at least one dimension, than aminimum size permitted by design rules; a rectangular test area definedby selected boundaries of at least first and second distinct,mask-patterned features, the test area being characterized by twodimensional parameters; a first conductive pathway that electricallyconnects the first mask-patterned feature to the pad; and, a secondconductive pathway that electrically connects the second mask-patternedfeature to a permanently or virtually grounded structure; wherein eachof the similarly-configured, NCEM-enabled fill cells in the first DOE isconfigured to render a first selected manufacturing failure observableas an abnormal pad-to-ground leakage or conductance, detected by VCinspection of the pad; and, wherein the similarly-configured,NCEM-enabled fill cells of the first DOE include a plurality ofvariants, where the variants differ in terms of their respectiveprobability of presenting an abnormal pad-to-ground leakage orresistance as a result of the first selected manufacturing failure. SuchICs may further include: a second DOE, comprising a plurality ofsimilarly-configured, NCEM-enabled fill cells, wherein each NCEM-enabledfill cell comprises at least: first and second elongated conductivesupply rails, formed in a connector or interconnect stack, extendingacross the entire width of the cell, and configured for compatibilitywith corresponding supply rails contained in the logic cells of thestandard cell region; a NCEM pad, formed in a conductive layer, the padbeing at least two times larger, in at least one dimension, than aminimum size permitted by design rules; a rectangular test area definedby selected boundaries of at least first and second distinct,mask-patterned features, the test area being characterized by twodimensional parameters; a first conductive pathway that electricallyconnects the first mask-patterned feature to the pad; and, a secondconductive pathway that electrically connects the second mask-patternedfeature to a permanently or virtually grounded structure; wherein eachof the similarly-configured, NCEM-enabled fill cells in the second DOEis configured to render a second selected manufacturing failureobservable as an abnormal pad-to-ground leakage or conductance, detectedby VC inspection of the pad, and wherein the second selectedmanufacturing failure is different than the first selected manufacturingfailure; and, wherein the similarly-configured, NCEM-enabled fill cellsof the second DOE include a plurality of variants, where the variantsdiffer in terms of their respective probability of presenting anabnormal pad-to-ground leakage or conductance as a result of the secondselected manufacturing failure. The first selected manufacturing failuremay involve short or leakage defects that present as abnormally highpad-to-ground conductance or leakage, and the second selectedmanufacturing failure may involve open or resistance defects thatpresent as abnormally low pad-to-ground conductance or abnormally highpad-to-ground resistance. Both the first and second selectedmanufacturing failures may involve layers in a connector stack region ofthe IC. Such ICs may further include: a third DOE, comprising aplurality of similarly-configured, NCEM-enabled fill cells, wherein eachNCEM-enabled fill cell comprises at least: first and second elongatedconductive supply rails, formed in a connector or interconnect stack,extending across the entire width of the cell, and configured forcompatibility with corresponding supply rails contained in the logiccells of the standard cell region; a NCEM pad, formed in a conductivelayer, the pad being at least two times larger, in at least onedimension, than a minimum size permitted by design rules; a rectangulartest area defined by selected boundaries of at least first and seconddistinct, mask-patterned features, the test area being characterized bytwo dimensional parameters; a first conductive pathway that electricallyconnects the first mask-patterned feature to the pad; and, a secondconductive pathway that electrically connects the second mask-patternedfeature to a permanently or virtually grounded structure; wherein eachof the similarly-configured NCEM-enabled fill cells in the third DOE isconfigured to render a third selected manufacturing failure observableas an abnormal pad-to-ground leakage, conductance or resistance,detected by VC inspection of the pad, and wherein the third selectedmanufacturing failure is different than the first selected manufacturingfailure, and is different than the second selected manufacturingfailure; and, wherein the similarly-configured NCEM-enabled fill cellsof the third DOE include a plurality of variants, where the variantsdiffer in terms of their respective probability of presenting anabnormal pad-to-ground leakage, conductance or resistance as a result ofthe third selected manufacturing failure. Each of the first, second, andthird DOEs preferably include NCEM-enabled fill cells in at least three,five, seven, or ten variants. The NCEM-enabled fill cells of the first,second, and third DOEs are preferably irregularly distributed within thestandard cell area of the IC. Each variant may differ from the other(s)only in the position, size, or shape of its first or secondmask-patterned feature, or only by a single dimensional parameter thatcharacterizes their respective test areas.

Again, generally speaking, and without intending to be limiting, anotheraspect of the invention relates to ICs that include, for example: astandard cell area that includes a mix of at least one thousand logiccells and fill cells of different widths and uniform heights, placedinto at least twenty adjacent rows, with at least twenty cells placedside-by-side in each row; wherein the IC includes at least a first DOE,the first DOE comprising a plurality of similarly-configured,NCEM-enabled fill cells, wherein each NCEM-enabled fill cell comprisesat least: first and second elongated conductive supply rails, formed ina connector or interconnect stack, extending across the entire width ofthe cell, and configured for compatibility with corresponding supplyrails contained in the logic cells of the standard cell region; a NCEMpad, formed in a conductive layer, the pad being at least two timeslarger, in at least one dimension, than a minimum size permitted bydesign rules; a rectangular test area defined by selected boundaries offirst and second distinct, mask-patterned features, the test areacharacterized by two dimensional parameters, the test area configured toprovide electrical isolation between the first and second mask-patternedfeatures in the absence of a first selected manufacturing failure; afirst conductive pathway that electrically connects the firstmask-patterned feature to the pad; and, a second conductive pathway thatelectrically connects the second mask-patterned feature to a permanentlyor virtually grounded structure; wherein each of thesimilarly-configured, NCEM-enabled fill cells in the first DOE isconfigured to render a first selected manufacturing failure observableas an abnormally high pad-to-ground conductance or leakage, detected byVC inspection of the pad; and, wherein the similarly-configured,NCEM-enabled fill cells of the first DOE include a plurality ofvariants, where the variants differ in terms of their respectiveprobability of presenting an abnormally high pad-to-ground conductanceor leakage as a result of the first selected manufacturing failure. Ineach of the NCEM-enabled fill cells of the first DOE, the first and/orsecond distinct, mask-patterned features may each represent either acontrol element, or a portion thereof, and/or a portion of a controlelement connector or a substrate connector, and/or a portion of acontrol element jumper, substrate jumper, or interconnect jumper. Ineach of the NCEM-enabled fill cells of the first and/or second DOE(s),the first and second distinct, mask-patterned features may appear in atip-to-tip configuration, a tip-to-side configuration, a side-to-sideconfiguration, a diagonal configuration, or an interlayer overlapconfiguration.

Again, generally speaking, and without intending to be limiting, anotheraspect of the invention relates to ICs that include, for example: astandard cell area that includes a mix of at least one thousand logiccells and fill cells of different widths and uniform heights, placedinto at least twenty adjacent rows, with at least twenty cells placedside-by-side in each row; wherein the IC includes at least a first DOE,the first DOE comprising a plurality of similarly-configured,NCEM-enabled fill cells, wherein each NCEM-enabled fill cell comprisesat least: first and second elongated conductive supply rails, formed ina connector or interconnect stack, extending across the entire width ofthe cell, and configured for compatibility with corresponding supplyrails contained in the logic cells of the standard cell region; a NCEMpad, formed in one or more conductive layer(s), the pad being at leasttwo times larger, in at least one dimension, than a minimum sizepermitted by design rules; a rectangular test area defined by selectedboundaries of a plurality of mask-patterned features, the test areacharacterized by two dimensional parameters, the plurality ofmask-patterned features including at least first and second featuresthat are electrically connected in the absence of a first manufacturingfailure; a first conductive pathway that electrically connects the firstmask-patterned feature to the pad; and, a second conductive pathway thatelectrically connects the second mask-patterned feature to a permanentlyor virtually grounded structure; wherein each of thesimilarly-configured NCEM-enabled fill cells in the first DOE isconfigured to render a first selected manufacturing failure observableas an abnormally high pad-to-ground conductance or leakage, detected byVC inspection of the pad; wherein the similarly-configured NCEM-enabledfill cells of the first DOE include a plurality of variants, where thevariants differ in terms of their respective probability of presentingan abnormally high pad-to-ground conductance or leakage as a result ofthe first selected manufacturing failure; and, wherein thesimilarly-configured NCEM-enabled fill cells of the first DOE areselected from the list consisting of: AA-tip-to-tip-short-configured,NCEM-enabled fill cells; AACNT-tip-to-tip-short-configured, NCEM-enabledfill cells; AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fillcells; TS-tip-to-tip-short-configured, NCEM-enabled fill cells;GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V0-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells;AA-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;M1-tip-to-side-short-configured, NCEM-enabled fill cells;V0-tip-to-side-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;V1-tip-to-side-short-configured, NCEM-enabled fill cells;M2-tip-to-side-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-tip-to-side-short-configured, NCEM-enabled fill cells;V2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells;AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cells;M1-side-to-side-short-configured, NCEM-enabled fill cells;V0-side-to-side-short-configured, NCEM-enabled fill cells;M1-V0-side-to-side-short-configured, NCEM-enabled fill cells;V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;V1-side-to-side-short-configured, NCEM-enabled fill cells;M2-side-to-side-short-configured, NCEM-enabled fill cells;M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;M3-side-to-side-short-configured, NCEM-enabled fill cells;V2-side-to-side-short-configured, NCEM-enabled fill cells;M3-V2-side-to-side-short-configured, NCEM-enabled fill cells;AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabledfill cells; V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; AA-diagonal-short-configured, NCEM-enabled fill cells;TS-diagonal-short-configured, NCEM-enabled fill cells;AACNT-diagonal-short-configured, NCEM-enabled fill cells;AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;GATE-diagonal-short-configured, NCEM-enabled fill cells;GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells;M1-diagonal-short-configured, NCEM-enabled fill cells;V0-diagonal-short-configured, NCEM-enabled fill cells;M1-V0-diagonal-short-configured, NCEM-enabled fill cells;V1-M1-diagonal-short-configured, NCEM-enabled fill cells;V1-diagonal-short-configured, NCEM-enabled fill cells;M2-diagonal-short-configured, NCEM-enabled fill cells;M2-V1-diagonal-short-configured, NCEM-enabled fill cells;M3-diagonal-short-configured, NCEM-enabled fill cells;V2-M2-diagonal-short-configured, NCEM-enabled fill cells;V2-diagonal-short-configured, NCEM-enabled fill cells;M3-V2-diagonal-short-configured, NCEM-enabled fill cells;AA-corner-short-configured, NCEM-enabled fill cells;AACNT-corner-short-configured, NCEM-enabled fill cells;AACNT-AA-corner-short-configured, NCEM-enabled fill cells;GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-TS-corner-short-configured, NCEM-enabled fill cells;GATECNT-corner-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;M1-corner-short-configured, NCEM-enabled fill cells;V0-corner-short-configured, NCEM-enabled fill cells;M1-V0-corner-short-configured, NCEM-enabled fill cells;V1-M1-corner-short-configured, NCEM-enabled fill cells;V1-corner-short-configured, NCEM-enabled fill cells;M2-corner-short-configured, NCEM-enabled fill cells;M2-V1-corner-short-configured, NCEM-enabled fill cells;M3-corner-short-configured, NCEM-enabled fill cells;V2-M2-corner-short-configured, NCEM-enabled fill cells;V2-corner-short-configured, NCEM-enabled fill cells;M3-V2-corner-short-configured, NCEM-enabled fill cells;GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill cells;M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill cells;V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill cells;M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill cells;V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells;V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;V0-merged-via-short-configured, NCEM-enabled fill cells;V1-merged-via-short-configured, NCEM-enabled fill cells; and,V2-merged-via-short-configured, NCEM-enabled fill cells; a second DOE,comprising a plurality of similarly-configured, NCEM-enabled fill cells,wherein each NCEM-enabled fill cell comprises at least: first and secondelongated conductive supply rails, formed in a connector or interconnectstack, extending across the entire width of the cell, and configured forcompatibility with corresponding supply rails contained in the logiccells of the standard cell region; a NCEM pad, formed in a conductivelayer, the pad being at least two times larger, in at least onedimension, than a minimum size permitted by design rules; a rectangulartest area defined by selected boundaries of at least first and seconddistinct, mask-patterned features, the test area being characterized bytwo dimensional parameters; a first conductive pathway that electricallyconnects the first mask-patterned feature to the pad; and, a secondconductive pathway that electrically connects the second mask-patternedfeature to a permanently or virtually grounded structure; wherein eachof the similarly-configured, NCEM-enabled fill cells in the second DOEis configured to render a second selected manufacturing failureobservable as an abnormally low pad-to-ground conductance or abnormallyhigh pad-to-ground resistance, detected by VC inspection of the pad;and, wherein the similarly-configured, NCEM-enabled fill cells of thesecond DOE include a plurality of variants, where the variants differ interms of their respective probability of presenting an abnormally lowpad-to-ground conductance or abnormally high pad-to-ground resistance asa result of the second selected manufacturing failure; and, wherein thesimilarly-configured NCEM-enabled fill cells of the second DOE areselected from the list consisting of: AA-snake-open-configured,NCEM-enabled fill cells; TS-snake-open-configured, NCEM-enabled fillcells; AACNT-snake-open-configured, NCEM-enabled fill cells;GATE-snake-open-configured, NCEM-enabled fill cells;GATECNT-snake-open-configured, NCEM-enabled fill cells;V0-snake-open-configured, NCEM-enabled fill cells;M1-snake-open-configured, NCEM-enabled fill cells;V1-snake-open-configured, NCEM-enabled fill cells;M2-snake-open-configured, NCEM-enabled fill cells;V2-snake-open-configured, NCEM-enabled fill cells;M3-snake-open-configured, NCEM-enabled fill cells;AA-stitch-open-configured, NCEM-enabled fill cells;TS-stitch-open-configured, NCEM-enabled fill cells;AACNT-stitch-open-configured, NCEM-enabled fill cells;GATECNT-stitch-open-configured, NCEM-enabled fill cells;V0-stitch-open-configured, NCEM-enabled fill cells;M1-stitch-open-configured, NCEM-enabled fill cells;V1-stitch-open-configured, NCEM-enabled fill cells;M2-stitch-open-configured, NCEM-enabled fill cells;V2-stitch-open-configured, NCEM-enabled fill cells;M3-stitch-open-configured, NCEM-enabled fill cells;AACNT-TS-via-open-configured, NCEM-enabled fill cells;AACNT-AA-via-open-configured, NCEM-enabled fill cells;TS-AA-via-open-configured, NCEM-enabled fill cells;GATECNT-GATE-via-open, NCEM-enabled fill cells;V0-GATECNT-via-open-configured, NCEM-enabled fill cells;V0-AA-via-open-configured, NCEM-enabled fill cells;V0-TS-via-open-configured, NCEM-enabled fill cells;V0-AACNT-via-open-configured, NCEM-enabled fill cells;V0-GATE-via-open-configured, NCEM-enabled fill cells;V0-via-open-configured, NCEM-enabled fill cells;M1-V0-via-open-configured, NCEM-enabled fill cells;V1-M1-via-open-configured, NCEM-enabled fill cells;V1-M2-via-open-configured, NCEM-enabled fill cells;M1-GATECNT-via-open-configured, NCEM-enabled fill cells;M1-AANCT-via-open-configured, NCEM-enabled fill cells;V2-M2-via-open-configured, NCEM-enabled fill cells;V2-M3-via-open-configured, NCEM-enabled fill cells;M1-metal-island-open-configured, NCEM-enabled fill cells;M2-metal-island-open-configured, NCEM-enabled fill cells;M3-metal-island-open-configured, NCEM-enabled fill cells;V0-merged-via-open-configured, NCEM-enabled fill cells;V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;V1-merged-via-open-configured, NCEM-enabled fill cells;V2-merged-via-open-configured, NCEM-enabled fill cells;V1-M1-merged-via-open-configured, NCEM-enabled fill cells;V2-M2-merged-via-open-configured, NCEM-enabled fill cells.

Again, generally speaking, and without intending to be limiting, anotheraspect of the invention relates methods for making ICs that include, forexample: (a) performing initial processing steps on a semiconductorwafer, the initial processing steps including: patterning a standardcell area that includes a mix of at least one thousand logic cells andfill cells of different widths and uniform heights, placed into at leasttwenty adjacent rows, with at least twenty cells placed side-by-side ineach row; and, patterning a first DOE by instantiating a plurality ofsimilarly-configured, NCEM-enabled fill cells in at least two variants,the NCEM-enabled fill cells configured for compatibility with logiccells in the standard cell area, each of the cells in the first DOEconfigured to enable evaluation of a first manufacturing failure byvoltage contrast examination of a NCEM of a pad contained in the cell,the variants exhibiting different NCEM sensitivity to the firstmanufacturing failure; (b) determining a presence or absence of thefirst manufacturing failure by: performing a voltage contrastexamination of NCEM-enabled fill cells in the first DOE; and,determining whether NCEMs of pads contained in the NCEM-enabled fillcells of the first DOE represent instance(s) of the first manufacturingfailure and, if so, determining whether different cell variants exhibita different prevalence of the first manufacturing failure; and, (c)based, at least in part, on results from step (b), selectivelyperforming additional processing, metrology or inspection steps on thewafer, and/or on other wafer(s) currently being manufactured using aprocess flow(s) relevant to the observed first manufacturing failure.Step (a) may further involve: patterning a second DOE by instantiating aplurality of similarly-configured NCEM-enabled fill cells in at leasttwo variants, the NCEM-enabled fill cells configured for compatibilitywith logic cells in the standard cell area and fill cells in the firstDOE, each of the cells in the second DOE configured to enable evaluationof a second manufacturing failure, different from the firstmanufacturing failure, by voltage contrast examination of a NCEM of apad contained in the cell, the variants exhibiting different NCEMsensitivity to the second manufacturing failure; and wherein step (b)further comprises: performing a voltage contrast examination ofNCEM-enabled fill cells in the second DOE; and, determining whetherNCEMs of pads contained in the NCEM-enabled fill cells of the second DOErepresent instance(s) of the second manufacturing failure and, if so,determining whether different cell variants exhibit a differentprevalence of the second manufacturing failure. Step (a) may furtherinvolve: patterning a third DOE by instantiating a plurality ofsimilarly-configured NCEM-enabled fill cells in at least two variants,the NCEM-enabled fill cells configured for compatibility with logiccells in the standard cell area and fill cells in the first and secondDOEs, each of the cells in the third DOE configured to enable evaluationof a third manufacturing failure, different from the first and secondmanufacturing failures, by voltage contrast examination of a NCEM of apad contained in the cell, the variants exhibiting different NCEMsensitivity to the third manufacturing failure; and wherein step (b)further comprises: performing a voltage contrast examination ofNCEM-enabled fill cells in the third DOE; and, determining whether NCEMsof pads contained in the NCEM-enabled fill cells of the third DOErepresent instance(s) of the third manufacturing failure and, if so,determining whether different cell variants exhibit a differentprevalence of the third manufacturing failure. At least one of thefirst, second, or third manufacturing failures preferably involvesunintended shorts or leakages, and at least one of the first, second, orthird manufacturing failures preferably involves unintended opens orexcessive resistances. Instantiating the NCEM-enabled fill cellspreferably comprises distributing the cells irregularly within thestandard cell area. Within each of the DOEs, each variant may differfrom the other(s) only in the position, size, or shape of a singlemask-patterned feature. At least one of the first, second, or thirdmanufacturing failures may involve unintended shorts between structuresin a tip-to-tip configuration, or unintended shorts between structuresin a tip-to-side configuration, or unintended shorts between structuresin a side-to-side configuration, or unintended shorts between structuresin a diagonal configuration, or unintended shorts between structures inan interlayer overlap configuration, or unintended interlayer shorts orleakages between structures in a corner configuration, unintended opensin snake-shaped structures, unintended opens in stitched structures,unintended opens in via-connected structures. Each of the first, second,and third DOEs preferably includes NCEM-enabled fill cells in at leastthree, five, seven, 11, 21, or more variants. Each of the first, second,and third DOEs may consist of cells selected from the list of:AA-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fill cells;TS-tip-to-tip-short-configured, NCEM-enabled fill cells;GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V0-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells;AA-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;M1-tip-to-side-short-configured, NCEM-enabled fill cells;V0-tip-to-side-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;V1-tip-to-side-short-configured, NCEM-enabled fill cells;M2-tip-to-side-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-tip-to-side-short-configured, NCEM-enabled fill cells;V2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells;AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cells;M1-side-to-side-short-configured, NCEM-enabled fill cells;V0-side-to-side-short-configured, NCEM-enabled fill cells;M1-V0-side-to-side-short-configured, NCEM-enabled fill cells;V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;V1-side-to-side-short-configured, NCEM-enabled fill cells;M2-side-to-side-short-configured, NCEM-enabled fill cells;M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;M3-side-to-side-short-configured, NCEM-enabled fill cells;V2-side-to-side-short-configured, NCEM-enabled fill cells;M3-V2-side-to-side-short-configured, NCEM-enabled fill cells;AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabledfill cells; V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; AA-diagonal-short-configured, NCEM-enabled fill cells;TS-diagonal-short-configured, NCEM-enabled fill cells;AACNT-diagonal-short-configured, NCEM-enabled fill cells;AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;GATE-diagonal-short-configured, NCEM-enabled fill cells;GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells;M1-diagonal-short-configured, NCEM-enabled fill cells;V0-diagonal-short-configured, NCEM-enabled fill cells;M1-V0-diagonal-short-configured, NCEM-enabled fill cells;V1-M1-diagonal-short-configured, NCEM-enabled fill cells;V1-diagonal-short-configured, NCEM-enabled fill cells;M2-diagonal-short-configured, NCEM-enabled fill cells;M2-V1-diagonal-short-configured, NCEM-enabled fill cells;M3-diagonal-short-configured, NCEM-enabled fill cells;V2-M2-diagonal-short-configured, NCEM-enabled fill cells;V2-diagonal-short-configured, NCEM-enabled fill cells;M3-V2-diagonal-short-configured, NCEM-enabled fill cells;AA-corner-short-configured, NCEM-enabled fill cells;AACNT-corner-short-configured, NCEM-enabled fill cells;AACNT-AA-corner-short-configured, NCEM-enabled fill cells;GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-TS-corner-short-configured, NCEM-enabled fill cells;GATECNT-corner-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;M1-corner-short-configured, NCEM-enabled fill cells;V0-corner-short-configured, NCEM-enabled fill cells;M1-V0-corner-short-configured, NCEM-enabled fill cells;V1-M1-corner-short-configured, NCEM-enabled fill cells;V1-corner-short-configured, NCEM-enabled fill cells;M2-corner-short-configured, NCEM-enabled fill cells;M2-V1-corner-short-configured, NCEM-enabled fill cells;M3-corner-short-configured, NCEM-enabled fill cells;V2-M2-corner-short-configured, NCEM-enabled fill cells;V2-corner-short-configured, NCEM-enabled fill cells;M3-V2-corner-short-configured, NCEM-enabled fill cells;GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill cells;M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill cells;V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill cells;M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill cells;V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells;V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;V0-merged-via-short-configured, NCEM-enabled fill cells;V1-merged-via-short-configured, NCEM-enabled fill cells;V2-merged-via-short-configured, NCEM-enabled fill cells;AA-snake-open-configured, NCEM-enabled fill cells;TS-snake-open-configured, NCEM-enabled fill cells;AACNT-snake-open-configured, NCEM-enabled fill cells;GATE-snake-open-configured, NCEM-enabled fill cells;GATECNT-snake-open-configured, NCEM-enabled fill cells;V0-snake-open-configured, NCEM-enabled fill cells;M1-snake-open-configured, NCEM-enabled fill cells;V1-snake-open-configured, NCEM-enabled fill cells;M2-snake-open-configured, NCEM-enabled fill cells;V2-snake-open-configured, NCEM-enabled fill cells;M3-snake-open-configured, NCEM-enabled fill cells;AA-stitch-open-configured, NCEM-enabled fill cells;TS-stitch-open-configured, NCEM-enabled fill cells;AACNT-stitch-open-configured, NCEM-enabled fill cells;GATECNT-stitch-open-configured, NCEM-enabled fill cells;V0-stitch-open-configured, NCEM-enabled fill cells;M1-stitch-open-configured, NCEM-enabled fill cells;V1-stitch-open-configured, NCEM-enabled fill cells;M2-stitch-open-configured, NCEM-enabled fill cells;V2-stitch-open-configured, NCEM-enabled fill cells;M3-stitch-open-configured, NCEM-enabled fill cells;AACNT-TS-via-open-configured, NCEM-enabled fill cells;AACNT-AA-via-open-configured, NCEM-enabled fill cells;TS-AA-via-open-configured, NCEM-enabled fill cells;GATECNT-GATE-via-open, NCEM-enabled fill cells;V0-GATECNT-via-open-configured, NCEM-enabled fill cells;V0-AA-via-open-configured, NCEM-enabled fill cells;V0-TS-via-open-configured, NCEM-enabled fill cells;V0-AACNT-via-open-configured, NCEM-enabled fill cells;V0-GATE-via-open-configured, NCEM-enabled fill cells;V0-via-open-configured, NCEM-enabled fill cells;M1-V0-via-open-configured, NCEM-enabled fill cells;V1-M1-via-open-configured, NCEM-enabled fill cells;V1-M2-via-open-configured, NCEM-enabled fill cells;M1-GATECNT-via-open-configured, NCEM-enabled fill cells;M1-AANCT-via-open-configured, NCEM-enabled fill cells;V2-M2-via-open-configured, NCEM-enabled fill cells;V2-M3-via-open-configured, NCEM-enabled fill cells;M1-metal-island-open-configured, NCEM-enabled fill cells;M2-metal-island-open-configured, NCEM-enabled fill cells;M3-metal-island-open-configured, NCEM-enabled fill cells;V0-merged-via-open-configured, NCEM-enabled fill cells;V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;V1-merged-via-open-configured, NCEM-enabled fill cells;V2-merged-via-open-configured, NCEM-enabled fill cells;V1-M1-merged-via-open-configured, NCEM-enabled fill cells; andV2-M2-merged-via-open-configured, NCEM-enabled fill cells.

Again, generally speaking, and without intending to be limiting, anotheraspect of the invention relates to methods for making ICs that include,for example: (a) performing initial processing steps on a firstsemiconductor wafer, the initial processing steps including, at least:patterning a first DOE by instantiating a plurality ofsimilarly-configured NCEM-enabled fill cells in at least two variants,the NCEM-enabled fill cells configured for compatibility with logiccells in the standard cell library, each of the cells in the first DOEconfigured to enable evaluation of a first manufacturing failure byvoltage contrast examination of a NCEM of a pad contained in the cell,the variants exhibiting different NCEM sensitivity to the firstmanufacturing failure; patterning a second DOE by instantiating aplurality of similarly-configured NCEM-enabled fill cells in at leasttwo variants, the NCEM-enabled fill cells configured for compatibilitywith logic cells in the standard cell library and fill cells in thefirst DOE, each of the cells in the second DOE configured to enableevaluation of a second manufacturing failure, different from the firstmanufacturing failure, by voltage contrast examination of a NCEM of apad contained in the cell, the variants exhibiting different NCEMsensitivity to the second manufacturing failure; and, patterning a thirdDOE by instantiating a plurality of similarly-configured NCEM-enabledfill cells in at least two variants, the NCEM-enabled fill cellsconfigured for compatibility with logic cells in the standard celllibrary and fill cells in the first and second DOEs, each of the cellsin the third DOE configured to enable evaluation of a thirdmanufacturing failure, different from the first and second manufacturingfailures, by voltage contrast examination of a NCEM of a pad containedin the cell, the variants exhibiting different NCEM sensitivity to thethird manufacturing failure; and, (b) determining a presence or absenceof the first, second, and third manufacturing failures by: performing avoltage contrast examination of NCEM-enabled fill cells in the firstDOE; determining whether NCEMs of pads contained in the NCEM-enabledfill cells of the first DOE represent instance(s) of the firstmanufacturing failure and, if so, determining whether different cellvariants exhibit a different prevalence of the first manufacturingfailure; performing a voltage contrast examination of NCEM-enabled fillcells in the second DOE; determining whether NCEMs of pads contained inthe NCEM-enabled fill cells of the second DOE represent instance(s) ofthe second manufacturing failure and, if so, determining whetherdifferent cell variants exhibit a different prevalence of the secondmanufacturing failure; performing a voltage contrast examination ofNCEM-enabled fill cells in the third DOE; and, determining whether NCEMsof pads contained in the NCEM-enabled fill cells of the third DOErepresent instance(s) of the third manufacturing failure and, if so,determining whether different cell variants exhibit a differentprevalence of the third manufacturing failure; and, (c) based, at leastin part, on results from step (b), fabricating product masks thatinclude: a standard cell area that includes a mix of at least onethousand logic cells, from the standard cell library, and fill cells ofdifferent widths and uniform heights, placed into at least twentyadjacent rows, with at least twenty cells placed side-by-side in eachrow; and, a fourth DOE that includes a plurality of similarly-configuredNCEM-enabled fill cells in at least two variants, the NCEM-enabled fillcells configured for compatibility with logic cells in the standard cellarea, each of the cells in the fourth DOE configured to enableevaluation of the first manufacturing failure by voltage contrastexamination of a NCEM of a pad contained in the cell, the variantsexhibiting different NCEM sensitivity to the first manufacturingfailure; and, the product masks not including any DOEs configured toenable evaluation of the second or third manufacturing failures; and,(d) using the product masks, performing initial processing steps on aproduct wafer, the initial processing steps including: patterning thestandard cell area; and, patterning the fourth DOE; (e) determining apresence or absence of the first manufacturing failure on the productwafer by: performing a voltage contrast examination of NCEM-enabled fillcells in the fourth DOE; and, determining whether NCEMs of padscontained in the NCEM-enabled fill cells of the fourth DOE representinstance(s) of the first manufacturing failure and, if so, determiningwhether different cell variants exhibit a different prevalence of thefirst manufacturing failure; and, (f) based, at least in part, onresults from step (e), selectively performing additional processing,metrology or inspection steps on the product wafer, and/or on otherproduct wafer(s) currently being manufactured using a process flow(s)relevant to the observed first manufacturing failure.

Again, generally speaking, and without intending to be limiting, anotheraspect of the invention relates to methods for making ICs that include,for example: (a) performing initial processing steps on an initialproduct wafer, the initial processing steps including, at least:patterning a standard cell area that includes a mix of at least onethousand logic cells and fill cells of different widths and uniformheights, placed into at least twenty adjacent rows, with at least twentycells placed side-by-side in each row; and, patterning, within thestandard cell area, a first DOE by instantiating a plurality ofsimilarly-configured NCEM-enabled fill cells in at least two variants,the NCEM-enabled fill cells configured for compatibility with logiccells in the standard cell area, each of the cells in the first DOEconfigured to enable evaluation of a first manufacturing failure byvoltage contrast examination of a NCEM of a pad contained in the cell,the variants exhibiting different NCEM sensitivity to the firstmanufacturing failure; patterning a second DOE by instantiating aplurality of similarly-configured NCEM-enabled fill cells in at leasttwo variants, the NCEM-enabled fill cells configured for compatibilitywith logic cells in the standard cell area and fill cells in the firstDOE, each of the cells in the second DOE configured to enable evaluationof a second manufacturing failure, different from the firstmanufacturing failure, by voltage contrast examination of a NCEM of apad contained in the cell, the variants exhibiting different NCEMsensitivity to the second manufacturing failure; and, (b) determining apresence or absence of the first and second manufacturing failures onthe initial product wafer by: performing a voltage contrast examinationof NCEM-enabled fill cells in the first DOE; determining whether NCEMsof pads contained in the NCEM-enabled fill cells of the first DOErepresent instance(s) of the first manufacturing failure and, if so,determining whether different cell variants exhibit a differentprevalence of the first manufacturing failure; performing a voltagecontrast examination of NCEM-enabled fill cells in the second DOE; and,determining whether NCEMs of pads contained in the NCEM-enabled fillcells of the second DOE represent instance(s) of the secondmanufacturing failure and, if so, determining whether different cellvariants exhibit a different prevalence of the second manufacturingfailure; and, (c) based, at least in part, on results from step (b),fabricating final product masks that include: a standard cell area thatincludes a mix of at least one thousand logic cells and fill cells ofdifferent widths and uniform heights, placed into at least twentyadjacent rows, with at least twenty cells placed side-by-side in eachrow; and, a third DOE that includes a plurality of similarly-configuredNCEM-enabled fill cells in at least two variants, the NCEM-enabled fillcells configured for compatibility with logic cells in the standard cellarea, each of the cells in the third DOE configured to enable evaluationof the first manufacturing failure by voltage contrast examination of aNCEM of a pad contained in the cell, the variants exhibiting differentNCEM sensitivity to the first manufacturing failure; the final productmasks not including any DOEs configured to enable evaluation of thesecond manufacturing failure; and, (d) using the final product masks,performing initial processing steps on a final product wafer, theinitial processing steps including: patterning the standard cell area;and, patterning the third DOE; and, (e) determining a presence orabsence of the first manufacturing failure on the final product waferby: performing a voltage contrast examination of NCEM-enabled fill cellsin the third DOE; and, determining whether NCEMs of pads contained inthe NCEM-enabled fill cells of the third DOE represent instance(s) ofthe first manufacturing failure and, if so, determining whetherdifferent cell variants exhibit a different prevalence of the firstmanufacturing failure; and, (f) based, at least in part, on results fromstep (e), selectively performing additional processing, metrology orinspection steps on the final product wafer, and/or on other productwafer(s) currently being manufactured using a process flow(s) relevantto the observed first manufacturing failure.

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of tip-to-tip shorts, including but notlimited to:

-   -   means/steps for enabling NC detection of AA tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1298-1326 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1327-1405 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA tip-to-tip        shorts [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1413-1461 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE tip-to-tip        shorts [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT tip-to-tip        shorts [see Grandparent FIGS. 10-11, 14-15, 41, 43, and        1462-1548 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        tip-to-tip shorts [see Grandparent FIGS. 10-11, 14-15, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1549-1556 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 tip-to-tip shorts        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of tip-to-side shorts, including but notlimited to:

-   -   means/steps for enabling NC detection of AA tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, 43, and 45 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AA tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, 43, 49, 50, and        1084-1119 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS-GATECNT tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, 43, and 1239-1263        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE        tip-to-side shorts [see Grandparent FIGS. 10-11, 16, 41, 43, and        1201-1238 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, 43, and 1120-1149        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        tip-to-side shorts [see Grandparent FIGS. 10-11, 16, 41, 43,        1150-1188 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, 43, and 1264-1297 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 tip-to-side shorts        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 tip-to-side        shorts [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of side-to-side shorts, including but notlimited to:

-   -   means/steps for enabling NC detection of AA side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, 43, and 786-804 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, 43, and 833-859 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE        side-to-side shorts [see Grandparent FIGS. 10-11, 17, 41, 43,        and 886-903 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, 43, and 860-872 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        side-to-side shorts [see Grandparent FIGS. 10-11, 17, 41, 43,        47A-C, and 873-885 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, 43, and 904-928 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, 43, and 929-936 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 side-to-side shorts        [see Grandparent FIGS. 10-11, 17, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 side-to-side        shorts [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of L-shape interlayer shorts, including butnot limited to:

-   -   means/steps for enabling NC detection of AA L-shape interlayer        shorts [see Grandparent FIGS. 10-11, 18-22, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AA-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATECNT L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AACNT L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-V0 L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1-L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-V1 L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3-M2 L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3-V2 L-shape        interlayer shorts [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of diagonal shorts, including but not limitedto:

-   -   means/steps for enabling NC detection of AA diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of TS diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA diagonal        shorts [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AACNT diagonal        shorts [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE diagonal        shorts [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, 43, and 495-554 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT diagonal        shorts [see Grandparent FIGS. 10-11, 23, 41, 43, and 555-632 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M3 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 diagonal shorts [see        Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 diagonal shorts        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of corner shorts, including but not limitedto:

-   -   means/steps for enabling NC detection of AA corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE corner        shorts [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-TS corner        shorts [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA corner        shorts [see Grandparent FIGS. 10-11, 24-26, 41, 43, and 263-286        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT corner        shorts [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, 43, and 416-494 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 corner shorts [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 corner shorts        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of interlayer-overlap shorts, including butnot limited to:

-   -   means/steps for enabling NC detection of GATE-AA interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, 43, and        692-734 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AACNT interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, 43, and        633-691 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-TS interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AACNT interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-V0 interlayer        overlap shorts [see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of        M2-M1-interlayer-overlap shorts [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of        V2-V1-interlayer-overlap shorts [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of        M3-M2-interlayer-overlap shorts [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of via-chamfer shorts, including but notlimited to:

-   -   means/steps for enabling NC detection of V0-GATECNT via chamfer        shorts [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT via chamfer        shorts [see Grandparent FIGS. 10-11, 28, 41, 43, and 52-256 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 via chamfer        shorts [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 via chamfer        shorts [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/step for enabling NC detection of V3-M3 via chamfer shorts        [see Grandparent FIGS. 10-11, 28, 41, 43, and 257-262 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of merged-via shorts, including but notlimited to:

-   -   means/steps for enabling NC detection of V0 merged via shorts        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 merged via shorts        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of V2 merged via shorts        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of snake opens, including but not limited to:

-   -   means/steps for enabling NC detection of AA snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of TS snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATE snake opens [see        Grandparent FIGS. 12-13, 30, 41, 43, and 1041-1048 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT snake opens        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0 snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1 snake opens [see        Grandparent FIGS. 12-13, 30, 41, 43, 44, and 1049-1066 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0-AACNT snake opens        [see Grandparent FIGS. 12-13, 30, 41, 43, and 1067-1071 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3 snake opens [see        Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of stitch opens, including but not limited to:

-   -   means/steps for enabling NC detection of AA stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of TS stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT stitch opens        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, 43, and 1072-1083 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3 stitch opens [see        Grandparent FIGS. 12-13, 31-32, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of via opens, including but not limited to:

-   -   means/steps for enabling NC detection of AACNT-TS via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 1629-1673 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 1557-1628 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS-AA via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2315-2330 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE via opens        [see Grandparent FIGS. 12-13, 33, 41, 43, 48, and 1699-2005 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT via opens        [see Grandparent FIGS. 12-13, 33, 41, 43, and 1674-1682 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT-GATE via        opens [see Grandparent FIGS. 12-13, 33, 41, 43, and 1683-1698        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATECNT via opens        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2375-2439 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA via opens [see        Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2331-2344 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS via opens [see        Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2345-2374 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE via opens [see        Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2440-2441 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2006-2220 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2442-2459 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M2 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2221-2256 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT via opens        [see Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M3 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2257-2274 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AANCT via opens [see        Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 via opens [see        Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection V3 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2460-2461 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M4-V3 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2275-2296 for        corresponding § 112(f) structure/acts];    -   and,    -   means/steps for enabling NC detection of M5-V4 via opens [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2297-2314 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of metal island opens, including but notlimited to:

-   -   means/steps for enabling NC detection of M1 metal island opens        [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 metal island opens        [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 metal island opens        [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of merged-via opens, including but not limitedto:

-   -   means/steps for enabling NC detection of V0-GATECNT merged via        opens [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 merged via opens        [see Grandparent FIGS. 12-13, 36, 41, 43, and 735-785 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT merged via        opens [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 merged via opens        [see Grandparent FIGS. 12-13, 36, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 merged via opens        [see Grandparent FIGS. 12-13, 36, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 merged via opens        [see Grandparent FIGS. 12-13, 36, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of V2-M2 merged via opens        [see Grandparent FIGS. 12-13, 36, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of tip-to-tip leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of AA tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1298-1326 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, 43, and        1327-1405 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, 43, and        1413-1461 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, 43, and        1462-1548 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        tip-to-tip leakages [see Grandparent FIGS. 10-11, 14-15, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, 43, and 1549-1556 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 tip-to-tip leakages        [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 tip-to-tip        leakages [see Grandparent FIGS. 10-11, 14-15, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of tip-to-side leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of AA tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, 43, and 45 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AA tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, 43, 49, 50, and        1084-1119 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS-GATECNT tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, 43, and 1239-1263        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE        tip-to-side leakages [see Grandparent FIGS. 10-11, 16, 41, 43,        and 1201-1238 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, 43, and 1120-1149        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        tip-to-side leakages [see Grandparent FIGS. 10-11, 16, 41, 43,        1150-1188 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, 43, and 1264-1297 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 tip-to-side leakages        [see Grandparent FIGS. 10-11, 16, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 tip-to-side        leakages [see Grandparent FIGS. 10-11, 16, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of side-to-side leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of AA side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, 43, and 786-804        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, 43, and 833-859        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE        side-to-side leakages [see Grandparent FIGS. 10-11, 17, 41, 43,        and 886-903 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, 43, and 860-872        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT        side-to-side leakages [see Grandparent FIGS. 10-11, 17, 41, 43,        47A-C, and 873-885 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, 43, and 904-928        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, 43, and 929-936        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 side-to-side        leakages [see Grandparent FIGS. 10-11, 17, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of L-shape interlayer leakages, including butnot limited to:

-   -   means/steps for enabling NC detection of AA L-shape interlayer        leakages [see Grandparent FIGS. 10-11, 18-22, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AA-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATECNT L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AACNT L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-V0 L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1-L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-V1 L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3-M2 L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3-V2 L-shape        interlayer leakages [see Grandparent FIGS. 10-11, 18-22, 41, and        43 for corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of diagonal leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of AA diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of TS diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA diagonal        leakages [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AACNT diagonal        leakages [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE diagonal        leakages [see Grandparent FIGS. 10-11, 23, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT diagonal        leakages [see Grandparent FIGS. 10-11, 23, 41, 43, and 495-554        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT diagonal        leakages [see Grandparent FIGS. 10-11, 23, 41, 43, and 555-632        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M3 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 diagonal leakages        [see Grandparent FIGS. 10-11, 23, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of corner leakages, including but not limitedto:

-   -   means/steps for enabling NC detection of AA corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA corner        leakages [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE corner        leakages [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-TS corner        leakages [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA corner        leakages [see Grandparent FIGS. 10-11, 24-26, 41, 43, and        263-286 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT corner        leakages [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, 43, and 416-494 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2-V1 corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 corner leakages [see        Grandparent FIGS. 10-11, 24-26, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3-V2 corner leakages        [see Grandparent FIGS. 10-11, 24-26, 41, and 43 for        corresponding § 112(f) structure/acts];

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of interlayer-overlap leakages, including butnot limited to:

-   -   means/steps for enabling NC detection of GATE-AA interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, 43, and        692-734 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-AACNT interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, 43, and        633-691 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATE-TS interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-TS interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AA interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT interlayer        overlap leakages see Grandparent FIGS. 10-11, 27, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AACNT interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-V0 interlayer        overlap leakages [see Grandparent FIGS. 10-11, 27, 41, and 43        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of        M2-M1-interlayer-overlap leakages [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of        V2-V1-interlayer-overlap leakages [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of        M3-M2-interlayer-overlap leakages [see Grandparent FIGS. 10-11,        27, 41, and 43 for corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of via-chamfer leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of V0-GATECNT via chamfer        leakages [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT via chamfer        leakages [see Grandparent FIGS. 10-11, 28, 41, 43, and 52-256        for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 via chamfer        leakages [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 via chamfer        leakages [see Grandparent FIGS. 10-11, 28, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of V3-M3 via chamfer        leakages [see Grandparent FIGS. 10-11, 28, 41, 43, and 257-262        for corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of merged-via leakages, including but notlimited to:

-   -   means/steps for enabling NC detection of V0 merged via leakages        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 merged via leakages        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of V2 merged via leakages        [see Grandparent FIGS. 10-11, 29, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of snake resistances, including but notlimited to:

-   -   means/steps for enabling NC detection of AA snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of TS snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of GATE snake resistances        [see Grandparent FIGS. 12-13, 30, 41, 43, and 1041-1048 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT snake        resistances [see Grandparent FIGS. 12-13, 30, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M1 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, 43, 44, and 1049-1066 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0-AACNT snake        resistances [see Grandparent FIGS. 12-13, 30, 41, 43, and        1067-1071 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of M2 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V2 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3 snake resistances        [see Grandparent FIGS. 12-13, 30, 41, and 43 for corresponding §        112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of stitch resistances, including but notlimited to:

-   -   means/steps for enabling NC detection of AA stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT stitch        resistances [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT stitch        resistances [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, 43, and 1072-1083 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M3 stitch resistances        [see Grandparent FIGS. 12-13, 31-32, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of via resistances, including but not limitedto:

-   -   means/steps for enabling NC detection of AACNT-TS via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        1629-1673 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of AACNT-AA via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        1557-1628 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of TS-AA via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2315-2330 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-GATE via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, 48, and        1699-2005 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        1674-1682 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of GATECNT-AACNT-GATE via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        1683-1698 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATECNT via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        2375-2439 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AA via resistances        [see Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0 via resistances [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2331-2344 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-TS via resistances        [see Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT via        resistances [see Grandparent FIGS. 12-13, 33, 41, 43, and        2345-2374 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-GATE via resistances        [see Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection of V1 via resistances [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2440-2441 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-V0 resistances [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2006-2220 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2442-2459 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M2 via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2221-2256 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-GATECNT via        resistances [see Grandparent FIGS. 12-13, 33, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M3 via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2257-2274 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M1-AANCT via        resistances [see Grandparent FIGS. 12-13, 33, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2-M2 via resistances        [see Grandparent FIGS. 12-13, 33, 41, and 43 for corresponding §        112(f) structure/acts];    -   means/steps for enabling NC detection V3 via resistances [see        Grandparent FIGS. 12-13, 33, 41, 43, and 2460-2461 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M4-V3 via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2275-2296 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of M5-V4 via resistances        [see Grandparent FIGS. 12-13, 33, 41, 43, and 2297-2314 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of metal island resistances, including but notlimited to:

-   -   means/steps for enabling NC detection of M1 metal island        resistances [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M2 metal island        resistances [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of M3 metal island        resistances [see Grandparent FIGS. 12-13, 34-35, 41, and 43 for        corresponding § 112(f) structure/acts];

Still further aspects of the invention relate to wafers, chips, andprocesses for making them that include/utilize DOEs based on means/stepsfor enabling NC detection of merged-via resistances, including but notlimited to:

-   -   means/steps for enabling NC detection of V0-GATECNT merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0 merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, 43, and        735-785 for corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V0-AACNT merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1 merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V2 merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts];    -   means/steps for enabling NC detection of V1-M1 merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts]; and,    -   means/steps for enabling NC detection of V2-M2 merged via        resistances [see Grandparent FIGS. 12-13, 36, 41, and 43 for        corresponding § 112(f) structure/acts].

Still further aspects of the invention relate to mesh-style NCEM pads,and their use with in-line process control/optimization, such padscomprising, for example: at least two parallel, elongated AACNTfeatures, extending longitudinally in a first direction; at least twoparallel, elongated GATECNT features, extending longitudinally in asecond direction, perpendicular to the first direction; wherein thefeatures are positioned such that each of the AANCT features intersectseach of the GATECNT features. Such pads may include at least three (orfour, or five, or six, etc.) parallel, elongated AACNT features thatextend longitudinally in the first direction, and/or at least three (orfour, or five, or six, etc.) parallel, elongated GATECNT features thatextend longitudinally in the second direction. Such pads may be part ofan assembly that includes: a mesh-style NCEM pad; and, an upper layerNCEM pad, overlying the mesh-style NCEM pad, said upper layer NCEM padcomprising: one or more mask-patterned features, in a first wiring layer(M1), that substantially cover the mesh-style NCEM pad; and, one or moremask-patterned features, in a via to interconnect stack (V0) layer, thatprovide electrical connection(s) between the M1 feature(s) and themesh-style NCEM pad. Such V0 features may be positioned at theintersections of the underlying AACNT and GATECNT features, or may bepositioned to avoid intersections of the underlying AACNT and GATECNTfeatures. The one or more M1 features may include multiple, parallel,elongated M1 features. Any of the aforesaid features may besingle-patterned, double-patterned, triple-patterned, etc. Suchmesh-style NCEM pads may be used in NCEM-enabled fill cells, includingbut not limited to: AA-tip-to-tip-short-configured, NCEM-enabled fillcells; AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-TS-tip-to-tip-short-configured, NCEM-enabled fill cells;TS-tip-to-tip-short-configured, NCEM-enabled fill cells;GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V0-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells;AA-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-TS-tip-to-side-short-configured, NCEM-enabled fill cells;M1-tip-to-side-short-configured, NCEM-enabled fill cells;V0-tip-to-side-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;V1-tip-to-side-short-configured, NCEM-enabled fill cells;M2-tip-to-side-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-tip-to-side-short-configured, NCEM-enabled fill cells;V2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells;AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cells;M1-side-to-side-short-configured, NCEM-enabled fill cells;V0-side-to-side-short-configured, NCEM-enabled fill cells;M1-V0-side-to-side-short-configured, NCEM-enabled fill cells;V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;V1-side-to-side-short-configured, NCEM-enabled fill cells;M2-side-to-side-short-configured, NCEM-enabled fill cells;M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;M3-side-to-side-short-configured, NCEM-enabled fill cells;V2-side-to-side-short-configured, NCEM-enabled fill cells;M3-V2-side-to-side-short-configured, NCEM-enabled fill cells;AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabledfill cells; V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; AA-diagonal-short-configured, NCEM-enabled fill cells;TS-diagonal-short-configured, NCEM-enabled fill cells;AACNT-diagonal-short-configured, NCEM-enabled fill cells;AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;GATE-diagonal-short-configured, NCEM-enabled fill cells;GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells;M1-diagonal-short-configured, NCEM-enabled fill cells;V0-diagonal-short-configured, NCEM-enabled fill cells;M1-V0-diagonal-short-configured, NCEM-enabled fill cells;V1-M1-diagonal-short-configured, NCEM-enabled fill cells;V1-diagonal-short-configured, NCEM-enabled fill cells;M2-diagonal-short-configured, NCEM-enabled fill cells;M2-V1-diagonal-short-configured, NCEM-enabled fill cells;M3-diagonal-short-configured, NCEM-enabled fill cells;V2-M2-diagonal-short-configured, NCEM-enabled fill cells;V2-diagonal-short-configured, NCEM-enabled fill cells;M3-V2-diagonal-short-configured, NCEM-enabled fill cells;AA-corner-short-configured, NCEM-enabled fill cells;AACNT-corner-short-configured, NCEM-enabled fill cells;AACNT-AA-corner-short-configured, NCEM-enabled fill cells;GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-TS-corner-short-configured, NCEM-enabled fill cells;GATECNT-corner-short-configured, NCEM-enabled fill cells;GATECNT-AA-corner-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;M1-corner-short-configured, NCEM-enabled fill cells;V0-corner-short-configured, NCEM-enabled fill cells;M1-V0-corner-short-configured, NCEM-enabled fill cells;V1-M1-corner-short-configured, NCEM-enabled fill cells;V1-corner-short-configured, NCEM-enabled fill cells;M2-corner-short-configured, NCEM-enabled fill cells;M2-V1-corner-short-configured, NCEM-enabled fill cells;M3-corner-short-configured, NCEM-enabled fill cells;V2-M2-corner-short-configured, NCEM-enabled fill cells;V2-corner-short-configured, NCEM-enabled fill cells;M3-V2-corner-short-configured, NCEM-enabled fill cells;GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill cells;M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill cells;V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill cells;M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill cells;V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells;V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;V3-M3-via-chamfer-short-configured, NCEM-enabled fill cells;V0-merged-via-short-configured, NCEM-enabled fill cells;V1-merged-via-short-configured, NCEM-enabled fill cells;V2-merged-via-short-configured, NCEM-enabled fill cells;AA-snake-open-configured, NCEM-enabled fill cells;TS-snake-open-configured, NCEM-enabled fill cells;AACNT-snake-open-configured, NCEM-enabled fill cells;GATE-snake-open-configured, NCEM-enabled fill cells;GATECNT-snake-open-configured, NCEM-enabled fill cells;V0-snake-open-configured, NCEM-enabled fill cells;M1-snake-open-configured, NCEM-enabled fill cells;M1-V0-AACNT-snake-open-configured, NCEM-enabled fill cells;V1-snake-open-configured, NCEM-enabled fill cells;M2-snake-open-configured, NCEM-enabled fill cells;V2-snake-open-configured, NCEM-enabled fill cells;M3-snake-open-configured, NCEM-enabled fill cells;AA-stitch-open-configured, NCEM-enabled fill cells;TS-stitch-open-configured, NCEM-enabled fill cells;AACNT-stitch-open-configured, NCEM-enabled fill cells;GATECNT-stitch-open-configured, NCEM-enabled fill cells;V0-stitch-open-configured, NCEM-enabled fill cells;M1-stitch-open-configured, NCEM-enabled fill cells;V1-stitch-open-configured, NCEM-enabled fill cells;M2-stitch-open-configured, NCEM-enabled fill cells;V2-stitch-open-configured, NCEM-enabled fill cells;M3-stitch-open-configured, NCEM-enabled fill cells;AACNT-TS-via-open-configured, NCEM-enabled fill cells;AACNT-AA-via-open-configured, NCEM-enabled fill cells;TS-AA-via-open-configured, NCEM-enabled fill cells;GATECNT-GATE-via-open-configured, NCEM-enabled fill cells;GATECNT-AACNT-via-open-configured, NCEM-enabled fill cells;GATECNT-AACNT-GATE-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-via-open-configured, NCEM-enabled fill cells;V0-AA-via-open-configured, NCEM-enabled fill cells;V0-TS-via-open-configured, NCEM-enabled fill cells;V0-AACNT-via-open-configured, NCEM-enabled fill cells;V0-GATE-via-open-configured, NCEM-enabled fill cells;V0-via-open-configured, NCEM-enabled fill cells;M1-V0-via-open-configured, NCEM-enabled fill cells;V1-via-open-configured, NCEM-enabled fill cells;V1-M1-via-open-configured, NCEM-enabled fill cells;V1-M2-via-open-configured, NCEM-enabled fill cells;M1-GATECNT-via-open-configured, NCEM-enabled fill cells;M1-AANCT-via-open-configured, NCEM-enabled fill cells;V2-M2-via-open-configured, NCEM-enabled fill cells;V2-M3-via-open-configured, NCEM-enabled fill cells;V3-via-open-configured, NCEM-enabled fill cells;M4-V3-via-open-configured, NCEM-enabled fill cells;M5-V4-via-open-configured, NCEM-enabled fill cells;M1-metal-island-open-configured, NCEM-enabled fill cells;M2-metal-island-open-configured, NCEM-enabled fill cells;M3-metal-island-open-configured, NCEM-enabled fill cells;V0-merged-via-open-configured, NCEM-enabled fill cells;V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;V1-merged-via-open-configured, NCEM-enabled fill cells;V2-merged-via-open-configured, NCEM-enabled fill cells;V1-M1-merged-via-open-configured, NCEM-enabled fill cells; and/orV2-M2-merged-via-open-configured, NCEM-enabled fill cells. Using suchmesh-style pads, a method for processing a semiconductor substrate mayinclude: using a first mask to pattern a plurality of adjacent AACNTstripes on the substrate; using a second mask to pattern a plurality ofadjacent GATECNT stripes on the substrate, where the GATECNT stripesperpendicularly overlap the AACNT stripes to form a mesh-style NCEM pad;and, obtaining in-line NCEM from the mesh-style NCEM pad. Such processmay further include: using a third mask to pattern a plurality of V0vias above at least some of the GATECNT and/or AACNT stripes of themesh-style NCEM pad; and, using a fourth mask to pattern one or more M1features above one or more of said V0 vias to form an M1 NCEM pad, andmay further include: obtaining in-line NCEM from the M1 NCEM pad.

As claimed in this application, a process for making a semiconductorwafer that includes at least a source/drain (AA) layer, a source/draincontact (AACNT) layer, a source/drain silicide (TS) layer, a gate (GATE)layer, and a gate contact (GATECNT) layer, such process comprising atleast: (i) creating a first design of experiments (DOE) byinstantiating, on the wafer, at least first and second non-contactelectrical measurement (NCEM)-enabled fill cells in a standard cellform, with first and second supply rails that extend horizontally acrossthe cells and uniformly spaced GATE stripes that extend verticallyacross the cells, said creating further including instantiating, on thewafer, test gap patterning that comprises first and second features,arranged in a side-to-side short configuration, with the first featureelectrically connected to an NCEM pad and the second featureelectrically connected to a permanent or virtual ground, therebyenabling detection of an unintended short or leakage between the firstand second features using a non-contact (NC) measurement at the NCEMpad, said creating further including providing at least one patterningdifference between the first and second NCEM-enabled fill cells thatresults in a different probability of detecting shorts or leakagesbetween the first and second features of the first NCEM-enabled fillcell and the first and second features of the second NCEM-enabled fillcell; and (ii) creating a second DOE by instantiating, on the wafer, atleast first and second NCEM-enabled fill cells in a standard cell form,with first and second supply rails that extend horizontally across thecells and uniformly spaced GATE stripes that extend vertically acrossthe cells, said creating further including instantiating, on the wafer,test gap patterning that comprises first and second features, arrangedin a chamfer short configuration, with the first feature electricallyconnected to an NCEM pad and the second feature electrically connectedto a permanent or virtual ground, thereby enabling detection of anunintended short or leakage between the first and second features usinga NC measurement at the NCEM pad, said creating further includingproviding at least one patterning difference between the first andsecond NCEM-enabled fill cells that results in a different probabilityof detecting shorts or leakages between the first and second features ofthe first NCEM-enabled fill cell and the first and second features ofthe second NCEM-enabled fill cell; wherein creating the first and secondDOEs further comprises instantiating all of the NCEM-enabled fill cellsin the first and second DOEs in a compatible standard cell form, withidentical spacing between the first and second supply rails andidentical spacing between adjacent GATE stripes. In some embodiments,such process further comprises obtaining first NC measurements from thefirst DOE. In some embodiments, such process further comprises using, atleast in part, the first NC measurements to selectively performadditional processing, metrology or inspection steps on the wafer,and/or on other wafer(s) currently being manufactured. In someembodiments, such process further comprises obtaining second NCmeasurements from the second DOE. In some embodiments, such processfurther comprises using, at least in part, the second NC measurements toselectively perform additional processing, metrology or inspection stepson the wafer, and/or on other wafer(s) currently being manufactured. Insome embodiments, such process further comprises obtaining first NCmeasurements from the first DOE and obtaining second NC measurementsfrom the second DOE. In some embodiments, such process further comprisesusing, at least in part, the first NC measurements and the second NCmeasurements to selectively perform additional processing, metrology orinspection steps on the wafer, and/or on other wafer(s) currently beingmanufactured. And in some embodiments, such wafer additionally includesat least a via to interconnect stack (V0) layer, a first wiring (M1)layer, a second wiring (M2) layer, an M1-to-M2 via (V1) layer, a thirdwiring (M3) layer, an M2-to-M3 via (V2) layer, a fourth wiring (M4)layer, an M3-to-M4 via (V3) layer, a fifth wiring (M5) layer, and anM4-to-M5 via (V4) layer, and such process further includesinstantiating, on the wafer, at least one additional NCEM-enabled fillcell selected from the list consisting of:AA-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fill cells;TS-tip-to-tip-short-configured, NCEM-enabled fill cells;GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V0-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells;AA-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;M1-tip-to-side-short-configured, NCEM-enabled fill cells;V0-tip-to-side-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;V1-tip-to-side-short-configured, NCEM-enabled fill cells;M2-tip-to-side-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-tip-to-side-short-configured, NCEM-enabled fill cells;V2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells;AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cells;M1-side-to-side-short-configured, NCEM-enabled fill cells;V0-side-to-side-short-configured, NCEM-enabled fill cells;M1-V0-side-to-side-short-configured, NCEM-enabled fill cells;V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;V1-side-to-side-short-configured, NCEM-enabled fill cells;M2-side-to-side-short-configured, NCEM-enabled fill cells;M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;M3-side-to-side-short-configured, NCEM-enabled fill cells;V2-side-to-side-short-configured, NCEM-enabled fill cells;M3-V2-side-to-side-short-configured, NCEM-enabled fill cells;AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabledfill cells; V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; AA-diagonal-short-configured, NCEM-enabled fill cells;TS-diagonal-short-configured, NCEM-enabled fill cells;AACNT-diagonal-short-configured, NCEM-enabled fill cells;AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;GATE-diagonal-short-configured, NCEM-enabled fill cells;GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells;M1-diagonal-short-configured, NCEM-enabled fill cells;V0-diagonal-short-configured, NCEM-enabled fill cells;M1-V0-diagonal-short-configured, NCEM-enabled fill cells;V1-M1-diagonal-short-configured, NCEM-enabled fill cells;V1-diagonal-short-configured, NCEM-enabled fill cells;M2-diagonal-short-configured, NCEM-enabled fill cells;M2-V1-diagonal-short-configured, NCEM-enabled fill cells;M3-diagonal-short-configured, NCEM-enabled fill cells;V2-M2-diagonal-short-configured, NCEM-enabled fill cells;V2-diagonal-short-configured, NCEM-enabled fill cells;M3-V2-diagonal-short-configured, NCEM-enabled fill cells;AA-corner-short-configured, NCEM-enabled fill cells;AACNT-corner-short-configured, NCEM-enabled fill cells;AACNT-AA-corner-short-configured, NCEM-enabled fill cells;GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-TS-corner-short-configured, NCEM-enabled fill cells;GATECNT-corner-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;M1-corner-short-configured, NCEM-enabled fill cells;V0-corner-short-configured, NCEM-enabled fill cells;M1-V0-corner-short-configured, NCEM-enabled fill cells;V1-M1-corner-short-configured, NCEM-enabled fill cells;V1-corner-short-configured, NCEM-enabled fill cells;M2-corner-short-configured, NCEM-enabled fill cells;M2-V1-corner-short-configured, NCEM-enabled fill cells;M3-corner-short-configured, NCEM-enabled fill cells;V2-M2-corner-short-configured, NCEM-enabled fill cells;V2-corner-short-configured, NCEM-enabled fill cells;M3-V2-corner-short-configured, NCEM-enabled fill cells;GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill cells;M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill cells;V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill cells;M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill cells;V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells;V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;V0-merged-via-short-configured, NCEM-enabled fill cells;V1-merged-via-short-configured, NCEM-enabled fill cells;V2-merged-via-short-configured, NCEM-enabled fill cells;AA-snake-open-configured, NCEM-enabled fill cells;TS-snake-open-configured, NCEM-enabled fill cells;AACNT-snake-open-configured, NCEM-enabled fill cells;GATE-snake-open-configured, NCEM-enabled fill cells;GATECNT-snake-open-configured, NCEM-enabled fill cells;V0-snake-open-configured, NCEM-enabled fill cells;M1-snake-open-configured, NCEM-enabled fill cells;V1-snake-open-configured, NCEM-enabled fill cells;M2-snake-open-configured, NCEM-enabled fill cells;V2-snake-open-configured, NCEM-enabled fill cells;M3-snake-open-configured, NCEM-enabled fill cells;AA-stitch-open-configured, NCEM-enabled fill cells;TS-stitch-open-configured, NCEM-enabled fill cells;AACNT-stitch-open-configured, NCEM-enabled fill cells;GATECNT-stitch-open-configured, NCEM-enabled fill cells;V0-stitch-open-configured, NCEM-enabled fill cells;M1-stitch-open-configured, NCEM-enabled fill cells;V1-stitch-open-configured, NCEM-enabled fill cells;M2-stitch-open-configured, NCEM-enabled fill cells;V2-stitch-open-configured, NCEM-enabled fill cells;M3-stitch-open-configured, NCEM-enabled fill cells;AACNT-TS-via-open-configured, NCEM-enabled fill cells;AACNT-AA-via-open-configured, NCEM-enabled fill cells;TS-AA-via-open-configured, NCEM-enabled fill cells;GATECNT-GATE-via-open, NCEM-enabled fill cells;V0-GATECNT-via-open-configured, NCEM-enabled fill cells;V0-AA-via-open-configured, NCEM-enabled fill cells;V0-TS-via-open-configured, NCEM-enabled fill cells;V0-AACNT-via-open-configured, NCEM-enabled fill cells;V0-GATE-via-open-configured, NCEM-enabled fill cells;V0-via-open-configured, NCEM-enabled fill cells;M1-V0-via-open-configured, NCEM-enabled fill cells;V1-M1-via-open-configured, NCEM-enabled fill cells;V1-M2-via-open-configured, NCEM-enabled fill cells;M1-GATECNT-via-open-configured, NCEM-enabled fill cells;M1-AANCT-via-open-configured, NCEM-enabled fill cells;V2-M2-via-open-configured, NCEM-enabled fill cells;V2-M3-via-open-configured, NCEM-enabled fill cells;M1-metal-island-open-configured, NCEM-enabled fill cells;M2-metal-island-open-configured, NCEM-enabled fill cells;M3-metal-island-open-configured, NCEM-enabled fill cells;V0-merged-via-open-configured, NCEM-enabled fill cells;V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;V1-merged-via-open-configured, NCEM-enabled fill cells;V2-merged-via-open-configured, NCEM-enabled fill cells;V1-M1-merged-via-open-configured, NCEM-enabled fill cells; andV2-M2-merged-via-open-configured, NCEM-enabled fill cells. In someembodiments, each of the first and second DOEs includes at least threedifferent NCEM-enabled fill cells. In some embodiments, each of thefirst and second DOEs includes at least five different NCEM-enabled fillcells. In some embodiments, at least one of the first and/or secondDOE(s) includes at least ten different NCEM-enabled fill cells. In someembodiments, at least one of the first and/or second DOE(s) includes atleast twenty different NCEM-enabled fill cells. In some embodiments, theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells.In some embodiments, the side-to-side-short-configured, NCEM-enabledfill cells of the first DOE compriseAACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells. Insome embodiments, the side-to-side-short-configured, NCEM-enabled fillcells of the first DOE comprise GATE-side-to-side-short-configured,NCEM-enabled fill cells. In some embodiments, theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise M1-side-to-side-short-configured, NCEM-enabled fill cells. Insome embodiments, the side-to-side-short-configured, NCEM-enabled fillcells of the first DOE comprise AACNT-side-to-side-short-configured,NCEM-enabled fill cells. In some embodiments, theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fillcells. In some embodiments, the side-to-side-short-configured,NCEM-enabled fill cells of the first DOE compriseGATECNT-side-to-side-short-configured, NCEM-enabled fill cells. In someembodiments, the side-to-side-short-configured, NCEM-enabled fill cellsof the first DOE comprise GATECNT-AACNT-side-to-side-short-configured,NCEM-enabled fill cells. In some embodiments, theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise M1-V0-side-to-side-short-configured, NCEM-enabled fill cells.In some embodiments, the chamfer-short-configured, NCEM-enabled fillcells of the second DOE comprise V0-AACNT-chamfer-short-configured,NCEM-enabled fill cells. In some embodiments, thechamfer-short-configured, NCEM-enabled fill cells of the second DOEcomprise V3-M3-chamfer-short-configured, NCEM-enabled fill cells.

BRIEF DESCRIPTION OF THE FIGURES

To provide a more complete understanding of the present disclosure andfeatures and advantages thereof, reference is made to the following setof figures, taken in conjunction with the accompanying description, inwhich:

[Note regarding the figures in this application: Those figures numbered52[A,B,C], 53[A,B,C], et seq. are to-scale layouts of the exempliefiedcells. While certain detail in these layouts may be difficult to see onthe application or patent as published, persons skilled in the art willappreciate that the SCORE tab in USPTO's Public PAIR system providesaccess to the applicant's PDF drawings, as originally uploaded, whichcan be electronically downloaded and blown up to reveal any level ofdesired detail.]

FIG. 1 depicts an outline of illustrative fill cells, suitable for usein connection certain embodiments of the invention;

FIG. 2 depicts an exemplary standard cell logic section with (shaded)NCEM-enabled fill cells, of various widths;

FIG. 3 depicts an exemplary standard cell logic section with a row (orportion thereof) that contains NCEM-enabled fill cells, of variouswidths;

FIG. 4 depicts an exemplary standard cell logic section with a testblock area (lower right portion) populated with NCEM-enabled fill cells,of various widths;

FIG. 5 depicts an exemplary portion of a test chip/wafer comprised ofNCEM-enabled fill cells, of various widths;

FIG. 6 conceptually depicts a portion of an exemplary chip/wafer inwhich a region comprised only (or almost only) of NCEM-enabled fillcells is positioned between two or more standard cell regions;

FIG. 7 depicts a cross-sectional, topological view of a monolithic ICstructure;

FIG. 8 depicts a physical layer stack for an exemplary CMOS process;

FIGS. 9A-9F depict several illustrative designs for a NCEM-enabled pad,suitable for use in connection with certain embodiments of theinvention;

FIGS. 10-11, in conjunction with the description below, depict theoverall physical structure and connectivity of short-configured (and/orleakage-configured), NCEM-enabled fill cells in accordance with certainaspects of the invention;

FIGS. 12-13, in conjunction with the description below, depict theoverall physical structure and connectivity of open-configured (and/orresistance-configured), NCEM-enabled fill cells in accordance withcertain aspects of the invention;

FIG. 14 depicts a plan view of exemplary test area geometry for anexemplary tip-to-tip-short-configured, NCEM-enabled fill cell;

FIG. 15 depicts another plan view of exemplary test area geometry for anexemplary tip-to-tip-short-configured, NCEM-enabled fill cell;

FIG. 16 depicts a plan view of exemplary test area geometry for anexemplary tip-to-side-short-configured, NCEM-enabled fill cell;

FIG. 17 depicts a plan view of exemplary test area geometry for anexemplary side-to-side-short-configured, NCEM-enabled fill cell;

FIG. 18 depicts a plan view of exemplary test area geometry for anexemplary L-shape-interlayer-short-configured, NCEM-enabled fill cell;

FIG. 19 depicts a plan view of exemplary test area geometry for anotherexemplary L-shape-interlayer-short-configured, NCEM-enabled fill cell;

FIG. 20 depicts a plan view of exemplary test area geometry for anotherexemplary L-shape-interlayer-short-configured, NCEM-enabled fill cell;

FIG. 21 depicts a plan view of exemplary test area geometry for anotherexemplary L-shape-interlayer-short-configured, NCEM-enabled fill cell;

FIG. 22 depicts a plan view of exemplary test area geometry for anotherexemplary L-shape-interlayer-short-configured, NCEM-enabled fill cell;

FIG. 23 depicts a plan view of exemplary test area geometry for anexemplary diagonal-short-configured, NCEM-enabled fill cell;

FIG. 24 depicts a plan view of exemplary test area geometry for anexemplary corner-short-configured, NCEM-enabled fill cell;

FIG. 25 depicts a plan view of exemplary test area geometry for anotherexemplary corner-short-configured, NCEM-enabled fill cell;

FIG. 26 depicts a plan view of exemplary test area geometry for anotherexemplary corner-short-configured, NCEM-enabled fill cell;

FIG. 27 depicts a plan view of exemplary test area geometry for anexemplary interlayer-overlap-short-configured, NCEM-enabled fill cell;

FIG. 28 depicts a plan view of exemplary test area geometry for anexemplary via-chamfer-short-configured, NCEM-enabled fill cell;

FIG. 29 depicts a plan view of exemplary test area geometry for anexemplary merged-via-short-configured, NCEM-enabled fill cell;

FIG. 30 depicts a plan view of exemplary test area geometry for anexemplary snake-open-configured, NCEM-enabled fill cell;

FIG. 31 depicts a plan view of exemplary test area geometry for anexemplary stitch-open-configured, NCEM-enabled fill cell;

FIG. 32 depicts a plan view of exemplary test area geometry for anotherexemplary stitch-open-configured, NCEM-enabled fill cell;

FIG. 33 depicts a plan view of exemplary test area geometry for anexemplary via-open-configured, NCEM-enabled fill cell;

FIG. 34 depicts a plan view of exemplary test area geometry for anexemplary metal-island-open-configured, NCEM-enabled fill cell;

FIG. 35 depicts a cross-sectional view of exemplary test area geometryfor the exemplary metal-island-open-configured, NCEM-enabled fill cell;

FIG. 36 depicts a plan view of exemplary test area geometry for anexemplary merged-via-open-configured, NCEM-enabled fill cell;

FIG. 37 shows exemplary expanded test area geometry from a 1^(st)variant of a NCEM-enabled fill cell;

FIG. 38 shows exemplary expanded test area geometry from a 2^(nd)variant of a NCEM-enabled fill cell;

FIG. 39 shows the logical AND of patterning within both expanded testareas (of FIGS. 37 & 38);

FIG. 40 shows the logical OR of patterning within both expanded testareas (of FIGS. 37 & 38);

FIG. 41 depicts an exemplary process flow, suitable for use inconnection with certain embodiments of the invention;

FIG. 42 depicts an exemplary process flow for obtaining and (optionally)using measurements from mesh-style NCEM pads;

FIG. 43 depicts another exemplary process flow, suitable for use inaccordance with certain embodiments of the invention;

FIG. 44 depicts a plan view of an exemplary M1-snake-open-configured,NCEM-enabled fill cell;

FIG. 45 depicts a plan view of an exemplaryAACNT-tip-to-side-short-configured, NCEM-enabled fill cell;

FIGS. 46A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0 and M1 layers—of anexemplary TS-GATE-side-to-side-short-configured, NCEM-enabled fill cellof type PDF_D_VCI_V16_14S1_01;

FIGS. 47A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0 and M1 layers—of anexemplary GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fillcell of type PDF_D_VCI_V16_14S1_05;

FIGS. 48A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0 and M1 layers—of anexemplary GATECNT-via-open-configured, NCEM-enabled fill cell of typePDF_D_VCI_V16_14S1_08;

FIGS. 49A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0 and M1 layers—of anexemplary GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cellof type PDF_D_VCI_V16_14S1_11;

FIGS. 50A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0 and M1 layers—of anexemplary GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cellof type PDF_D_VCI_V16_14S1_12;

FIG. 51 contains a layer legend for FIGS. 1A-C, 2A-C, 3A-C, etc., whichfollow;

FIGS. 52A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary V0-AACNT-chamfer-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S117_0009_1;

FIGS. 53A-B respectively depict plan views of—(A) all layers; (B) M3,V3, M4, V4, and M5 layers—of an exemplaryV3-M3-chamfer-short-configured, NCEM-enabled fill cell of typeL_V54C_B_PDF_VCI_10001F6_01;

FIGS. 54A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AA-corner-short-configured, NCEM-enabled fill cell oftype L_V54C_E_PDF_VCI_2000180_01;

FIGS. 55A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-TS-corner-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S108_0003_1;

FIGS. 56A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-corner-short-configured, NCEM-enabled fill cell of typeA_PDF_VCI_FILL8_9S113_0001_1;

FIGS. 57A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-diagonal-short-configured, NCEM-enabled fill cell oftype D_PDF_VCI_VFILL4_12S01_0109_1;

FIGS. 58A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fillcell of type A_PDF_VCI_FILL8_9S102_0001_1;

FIGS. 59A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-GATE-interlayer-overlap-short-configured, NCEM-enabledfill cell of type A_PDF_VCI_FILL8_9S104_0003_1;

FIGS. 60A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fillcell of type D_PDF_VCI_VFILL4_12S01_0113_1;

FIGS. 61A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary V0-merged-via-open-configured, NCEM-enabled fill cell of typeA_PDF_VCI_FILL8_9S117_0003_1;

FIGS. 62A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-side-to-side-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S117_0001_1;

FIGS. 63A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-GATE-side-to-side-short-configured, NCEM-enabled fillcell of type C_V682_PDF_VCI_08_2000171_01;

FIGS. 64A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATE-side-to-side-short-configured, NCEM-enabled fill cell oftype C_V682_PDF_VCI_16_2000106_01;

FIGS. 65A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-side-to-side-short-configured, NCEM-enabled fill cellof type G_V931_PDF_VCI_3000134_01;

FIGS. 66A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fillcell of type G_V931_PDF_VCI_4000160_01;

FIGS. 67A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fillcell of type K_V549_PDF_VCI_3000134_01;

FIGS. 68A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-side-to-side-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S114_0002_1;

FIGS. 69A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-V0-side-to-side-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S122_0001_1;

FIGS. 70A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary TS-GATE-side-to-side-short-configured, NCEM-enabled fill cellof type A_PDF_VCI_FILL4_9S120_0001_1;

FIGS. 71A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATE-snake-open-configured, NCEM-enabled fill cell of typeC_V682_PDF_VCI_16_2000168_01;

FIGS. 72A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-snake-open-configured, NCEM-enabled fill cell of typeA_PDF_VCI_FILL8_9S114_0001_1;

FIGS. 73A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-V0-AACNT-snake-open-configured, NCEM-enabled fill cell oftype I_V421_VCI_20S30001BB_001;

FIGS. 74A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-stitch-open-configured, NCEM-enabled fill cell of typeA_PDF_VCI_FILL8_9S116_0001_1;

FIGS. 75A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cellof type A_PDF_VCI_FILL6_9S109_0001_1;

FIGS. 76A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-tip-to-side-short-configured, NCEM-enabled fill cellof type D_PDF_VCI_VFILL4_12S01_0101_1;

FIGS. 77A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fillcell of type G_V931_PDF_VCI_300013E_01;

FIGS. 78A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-TS-tip-to-side-short-configured, NCEM-enabledfill cell of type K_V549_PDF_VCI_2000104_01;

FIGS. 79A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fillcell of type G_V931_PDF_VCI_2000181_01;

FIGS. 80A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-TS-tip-to-side-short-configured, NCEM-enabled fillcell of type I_V421_VCI_20S10001FE_001;

FIGS. 81A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-tip-to-side-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S115_0003_1;

FIGS. 82A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AA-tip-to-tip-short-configured, NCEM-enabled fill cell of typeA_PDF_VCI_FILL4_9S110_0001_1;

FIGS. 83A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-tip-to-tip-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL6_9S103_0002_1;

FIGS. 84A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-TS-tip-to-tip-short-configured, NCEM-enabled fill cellof type G_V931_PDF_VCI_30001F2_01;

FIGS. 85A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATE-tip-to-tip-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S118_0003_1;

FIGS. 86A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S101_0002_1;

FIGS. 87A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-tip-to-tip-short-configured, NCEM-enabled fill cell of typeI_PDF_VCI_FILL12_19S200019E;

FIGS. 88A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-AA-via-open-configured, NCEM-enabled fill cell of typeC_V682_PDF_VCI_08_10001F5_01;

FIGS. 89A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary AACNT-TS-via-open-configured, NCEM-enabled fill cell of typeD_PDF_VCI_VFILLE_12S02_0053_1;

FIGS. 90A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-via-open-configured, NCEM-enabled fill cell oftype G_V931_PDF_VCI_30001FC_01;

FIGS. 91A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-AACNT-GATE-via-open-configured, NCEM-enabled fill cellof type A_PDF_VCI_FILL8_9S112_0001_1;

FIGS. 92A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary GATECNT-GATE-via-open-configured, NCEM-enabled fill cell oftype A_PDF_VCI_FILL8_9S101_0004_1;

FIGS. 93A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary M1-V0-via-open-configured, NCEM-enabled fill cell of typeC_V682_PDF_VCI_08_2000156_01;

FIGS. 94A-B respectively depict plan views of—(A) all layers; (B) V0,M1, V1, and M2 layers—of an exemplary M2-V1-via-open-configured,NCEM-enabled fill cell of type K_V549_PDF_VCI_2000176_01;

FIGS. 95A-B respectively depict plan views of—(A) all layers; (B) V1,M2, V2, and M3 layers—of an exemplary M3-V2-via-open-configured,NCEM-enabled fill cell of type K_V549_PDF_VCI_200017C_01;

FIGS. 96A-B respectively depict plan views of—(A) all layers; (B) M3,V3, M4, V4, and M5 layers—of an exemplary M4-V3-via-open-configured,NCEM-enabled fill cell of type K_V549_PDF_VCI_2000180_01;

FIGS. 97A-B respectively depict plan views of—(A) all layers; (B) M3,V3, M4, V4, and M5 layers—of an exemplary M5-V4-via-open-configured,NCEM-enabled fill cell of type K_V549_PDF_VCI_200018A_01;

FIGS. 98A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary TS-AA-via-open-configured, NCEM-enabled fill cell of typeG_V931_PDF_VCI_2000194_01;

FIGS. 99A-C respectively depict plan views of—(A) all layers; (B) NWELL,AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—of anexemplary V0-via-open-configured, NCEM-enabled fill cell of typeI_PDF_VCI_FILL08_19S2000194;

FIGS. 100A-C respectively depict plan views of—(A) all layers; (B)NWELL, AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—ofan exemplary V0-AACNT-via-open-configured, NCEM-enabled fill cell oftype C_V682_PDF_VCI_08_2000124_01;

FIGS. 101A-C respectively depict plan views of—(A) all layers; (B)NWELL, AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, and M1 layers—ofan exemplary V0-GATECNT-via-open-configured, NCEM-enabled fill cell oftype C_V682_PDF_VCI_08_2000136_01;

FIGS. 102A-C respectively depict plan views of—(A) all layers; (B)NWELL, AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, M1, V1, and M2layers—of an exemplary V1-via-open-configured, NCEM-enabled fill cell oftype K_V549_PDF_VCI_3000152_01;

FIGS. 103A-C respectively depict plan views of—(A) all layers; (B)NWELL, AA, GATE, GATECNT, TS, and AACNT layers; (C) V0, M1, V1, and M2layers—of an exemplary V1-M1-via-open-configured, NCEM-enabled fill cellof type L_V54C_E_PDF_VCI_10001F9_01; and,

FIGS. 104A-B respectively depict plan views of—(A) all layers; (B) M3,V3, M4, V4, and M5 layers—of an exemplary V3-via-open-configured,NCEM-enabled fill cell of type K_V549 PDF_VCI_3000154_01.

DESCRIPTION OF EXEMPLARY/PREFERRED EMBODIMENT(S)

Reference is now made to FIG. 1, which depicts an outline ofillustrative fill cells suitable for use in connection certainembodiments of the invention, such fill cells are typically provided ina uniform height and various widths, traditionally multiples of theminimum contacted poly pitch (CPP) permitted by the fabrication process.FIG. 1 includes fill cells of width 4 CPP, 8 CPP, 16 CPP, 32 CPP, and 64CPP, but any collection of widths—or just a single width—is possible.Furthermore, certain embodiments of the invention may include double ortriple height fill cells, as well. As persons skilled in the art willappreciate, traditional fill cells include certain features necessaryfor compatibility with the logic cells used to form circuits on thechip. Such necessary features include a height that is consistent withlogic cells in the library (or an integer multiple of that height), aswell as power/ground rails that extend horizontally across the fillcells (traditionally, though not necessarily, at the top and bottom ofeach cell). Such necessary features are preferably maintained in theNCEM-enabled fill cells used in connection with the present invention.

Reference is now made to FIG. 2, which depicts an exemplary standardcell logic section with (shaded) NCEM-enabled fill cells, of variouswidths. As depicted, the NCEM-enabled fill cells are preferablyinstantiated wherever a traditional fill cell would otherwise be placed.However, the invention places no restriction on the distribution of suchNCEM-enabled fill cells. While they would typically appear in eachstandard cell row, they need not. The fill cell placement can beregular, semi-regular (e.g., at least one fill cell every X nm, or everyY cells), or irregular. Two fill cells can be adjacent to each other.There may be some double height (or greater) fill cells. And the logicsection may include both NCEM-enabled as well as other types of fillcells.

Reference is now made to FIG. 3, which depicts an exemplary standardcell logic section with a row (or portion thereof) that containsNCEM-enabled fill cells, of various widths. As depicted, certainembodiments of the invention may include complete row(s), or contiguousportion(s) thereof, populated entirely with NCEM-enabled fill cells.Such row(s) may include fill cells of varying or fixed widths, and suchrow(s) may be adjacent or separated, and may be distributed regularly,semi-regularly or irregularly throughout the logic section.

Reference is now made to FIG. 4, which depicts an exemplary standardcell logic section with a test block area (lower right portion)populated with NCEM-enabled fill cells, of various widths. Such testblock section(s) need not be entirely contiguous, need not be generallyrectangular or square, may include fill cells of a single width ormultiple widths, and one or multiple heights.

Reference is now made to FIG. 5, which depicts an exemplary portion of atest chip/wafer comprised of NCEM-enabled fill cells, of various widths.Such test vehicles may comprise a die, a chip, a wafer, or a portion ofany of these. Such test vehicles need not be entirely contiguous, mayhave any overall shape, and may include fill cells of a single width ormultiple widths, and one or multiple heights.

Reference is now made to FIG. 6, which conceptually depicts a portion ofan exemplary chip/die/wafer with a region comprised only (or almostonly) of NCEM-enabled fill cells positioned between two or more standardcell regions (such as those of FIGS. 2-5). As persons skilled in the artwill appreciate, FIG. 6 illustrates how various embodiments of theinvention may instantiate/distribute the inventive NCEM-enabled fillcells (and DOEs based on them) in any manner whatsoever, and that thedistribution patterns—both regular and irregular—may vary throughoutdifferent regions of a chip or wafer.

As persons skilled in the art will appreciate, the configurations ofFIGS. 2-5 and 6 are mere examples of many available possibilities, andare not intended to be limiting or exhaustive. Furthermore, such skilledpersons will appreciate that any given die, chip or wafer may include acombination of these and/or other possible configurations.

Reference is now made to FIG. 7, which depicts cross-sectional,topological view of a monolithic IC structure to which the invention maybe applied. This topological view depicts—from bottom to top—threevertically defined portions: (i) substrate; (ii) connector stack; and(iii) interconnect stack.

The substrate preferably comprises a wafer, die, or other portion ofmonocrystalline silicon, or another substrate suitable for formingsemiconductor devices, such as silicon-on-insulator (SOI), Ge, C, GaAs,InP, GaInAs, AlAs, GaSb, (Ga,Mn)As, GaP, GaN, InAS, SiGe, SiSn, CdSe,CdTe, CdHgTe, ZnS, SiC, etc. Generally speaking, the substraterepresents the object to which manufacturing steps (e.g., deposition,masking, etching, implantation) are initially applied, and is the objectwithin which, or upon which, switching devices (e.g., FETs, bipolartransistors, photodiodes, magnetic devices, etc.) or storage devices(e.g., charged oxides, capacitors, phase change memories, etc.) arebuilt.

The connector stack is a collection of multiple layers, generally formedon top of the substrate, that supports localized connections betweendevices in, or on, the substrate, and/or connections to wires in aninterconnect stack located above. The layers that make up the connectorstack need not be strictly “stacked”; some can be partially or fullyco-planar. For example, as illustrated in FIG. 8, which depicts aphysical view of an exemplary CMOS layer stack, the source/drain contactand gate contact layers are partially co-planar because they sharevertical extent, but on the bottom, the source/drain contact layerextends below the bottom of the gate contact layer, and on the top, thegate contact layer extends above the top of the source/drain contactlayer. An example of full co-planarity would be where these two layershad identical vertical extent.

The connector stack supports various types of “connectors” and“jumpers,” as illustrated in FIG. 7. These illustrative connectors andjumpers are not intended to represent individual physical layers, butrather conductive pathways that connect the identified elements. Aspersons skilled in the art will appreciate, each connector or jumper canbe implemented using one or more manufactured “layers,” where somelayers may appear as parts of multiple types of connectors/jumpers.

FIG. 7. specifically illustrates the following connectors/jumpers:

-   -   Control element connector        -   A conductive pathway between (i) one or more control            elements and (ii) a wire in the first (e.g., m1) layer of            the interconnect stack. Control element connectors will also            contact any interconnect jumpers, substrate connectors, or            control element jumpers that they cross.    -   Substrate connector        -   A conductive pathway between (i) a portion of the substrate            and (ii) a wire in the first layer of the interconnect            stack. Substrate connectors will also contact any            interconnect jumpers, substrate jumpers, control element            connectors, or control element jumpers that they cross.    -   Substrate jumper        -   A conductive pathway between two portions of the substrate            that would not be connected without the substrate jumper.            Substrate jumpers will also contact any substrate            connectors—but not interconnect jumpers—that they cross.    -   Interconnect jumper        -   A conductive pathway between two wires in the first            interconnect layer that would not be connected without the            interconnect jumper. Interconnect jumpers will also contact            any substrate connectors or control element connectors that            they cross.    -   Control element jumper        -   A conductive pathway between two control elements. Control            element jumpers will also contact any control elements,            control element connectors, or substrate connectors that            they cross.    -   Non-adjacent control element jumper, not depicted in FIG. 7, but        defined as follows:        -   A conductive pathway between two control elements.            Non-adjacent control element jumpers can pass over other            control elements without contacting them. Non-adjacent            control element jumpers will contact any control element            connectors or substrate connectors that they cross.

Above the connector stack lies the interconnect stack. The interconnectstack is comprised of conductive wiring layers (labeled “m1,” “m2,”etc.—that need only be conductive, not necessarily metallic) withconductive vias (labeled “v1,” “v2,” etc.) that connect adjacent wiringlayers. While three wiring layers are shown in FIGS. 7-8, it isunderstood that this number could vary from one to ten or more.Furthermore, while the vias and wiring layers in FIGS. 7-8 are shown asnon-overlapping, it is possible for vias to extend into one or both ofthe wiring layers that they connect, or traverse more than two wiringlayers.

Reference is now made to FIG. 8, which depicts a (simplified) layerstack for an exemplary CMOS process, with the correspondence betweenmajor regions—substrate, connector stack, interconnect stack—and processlayers indicated on the drawing. As depicted in FIG. 8, the substratehosts the source(s)/drain(s) of the FETs, the device isolation trenches(STI), and a lower portion of the gate(s). The connector stackimplements the upper portions of the gate(s), the source/drainsilicide(s), source/drain contact(s), gate contact(s), and via(s) to theinterconnect stack. The interconnect stack contains multiple wiring (m1,m2, . . . ) layers, with vias (v1, v2, . . . ) between adjacent wiringlayers.

The vendor-independent layers of FIG. 8 can be readily mapped to thoseof commercial CMOS processes, such as GlobalFoundries (“GF”) (see U.S.Pat. Pub. Nos. US2014/0302660A1 and US2015/0170735A1 re the “GF layers”)or Taiwan Semiconductor Manufacturing Co. (“TSMC”) (see U.S. Pat. Pub.No. US2014/0210014A1 re the “TSMC layers”). Below is an exemplarymapping:

FIG. 8 layer GF layer TSMC layer gate (GATE) PC PO source/drain (AA) RXOD source/drain silicide (TS) TS M0_OD1 gate contact (GATECNT) CB M0_POsource/drain contact (AACNT) CA M0_OD2 via to interconnect stack (V0) V0Via0 first wiring layer (M1) M1 M1Indicated in parentheses are the names used to label these layers inFIGS. 44, 45, et seq. of this application. Persons skilled in the artwill realize that these represent a minority of the manylayers/masks/etc. used in the fabrication of modern devices.Nevertheless, these are believed to be the layers most relevant toenabling a skilled artisan to make and use the invention, and are thelayers traditionally depicted in patent drawings of semiconductorstructures (as shown, for example, by the cited GF and TSMCapplications). In certain instances, additional layers may be added todepictions of selected NCEM-enabled fill cells.

Persons skilled in the art will also understand that most of the abovelayers can—and often are—rendered in multiple patterning steps.Typically, in this application, the drawings will combine all exposuresinto a single depicted layer (e.g., M1=M1E1+M1E2, or M1E1+M1E2+M1E3). Inmost cases, such details are irrelevant to the operation of theinvention, and are determined largely by requirements of the fabricationprocess. In certain cases (e.g., anM1-M1-stitch-overlap-open-configured, NCEM-enabled fill cell), somepotentially relevant detail(s) may be obscured by the exposure merging;however, such obscured detail(s) will nonetheless be readily apparent tothe skilled artisan (by, for example, the fact that the named structure,e.g., M1-M1-stitch-overlap-open-configured, NCEM-enabled fill cell, mustcontain at least one overlap test region, as per FIG. 32, that isrendered in different exposures of M1, and located on the M1 pathbetween the NCEM pad and ground).

Furthermore, short-configured cells can exist in both “same color” and“different color” varieties. For example, in a process that usesmulti-patterned M1, the M1-tip-to-tip-configured, NCEM-enabled fillcells would come in two varieties:M1-tip-to-tip-same-color-short-configured cells, as well asM1-tip-to-tip-different-color-short-configured cells. The same appliesto other short configurations, such as side-to-side, diagonal, etc.

Reference is now made to FIGS. 9A-9E, which depict several illustrativedesigns for a NCEM pad, suitable for use in connection with embodimentsof the invention. Additional NCEM pads are disclosed in the incorporated'841 application. FIG. 9A shows a simple, solid conductive pad,typically, though not necessarily, formed in M1. FIGS. 9B-9D and 9Fdepict several options for a non-solid, segmented, single-conductor pad.(As persons skilled in the art will appreciate, the variety of shapesfor such pads is endless.) FIG. 9E depicts an example of a presentlypreferred, multi-conductor, mesh-style pad. Applicants' experimentationhas revealed that these mesh-style pad designs—which are more spaceefficient and design rule friendly than single conductor pads—stillproduce a usable NCEM, particularly if sampled at low resolution, astaught in the incorporated '841 application. Grandparent FIGS. 9G-9IIIIdepict additional embodiments of mesh pad structures. As persons skilledin the art will appreciate, these structures can be rendered in any size(e.g., 2×2, 2×3, 3×2, 3×3, etc.), and not just the specifically depicted10×9 and 5×2 examples.

Design of the NCEM-Enabled Fill Cells:

Such fill cells preferably have certain common elements (e.g., height,supply rails, and GATE pitch (CPP) that is consistent with standardcells in the library), then vary according to the measurement type,layer(s) involved, and structure(s) to be evaluated/tested. NCEM-enabledfill cells come in two basic types: short[/leakage] andopen[/resistance]. Relevant layers typically involve either a singleprocess layer (e.g., GATE-to-GATE) or two process layers (e.g.GATECNT-to-GATE). Structural configurations are many, and include a setof standard structures (e.g., tip-to-tip, tip-to-side, side-to-side,etc.), as well as reference or ad hoc structures.

As depicted in FIGS. 10-11, the general structure of ashort[/leakage]-configured, NCEM-enabled fill cell preferably includesfour overlaid components: (i) “standard” patterning; (ii) a NCEM pad;(iii) “test gap” patterning; and (iv) pad/ground wiring. Standardpatterning is that which appears in essentially all of the standardlibrary cells, such as supply rails, and sometimes minimum contactedpoly pitch (CPP) spaced rail-to-rail GATE stripes, etc. The NCEM padscan take a variety of shapes/patterns, as is non-exhaustivelyexemplified in FIGS. 9A-9F and Grandparent FIGS. 9G-9IIII. The standardstructures used for test gap patterning are depicted in FIGS. 14-30, andmay include tip-to-tip, tip-to-side, side-to-side, etc. (Note that asingle, short-configured NCEM-enabled fill cell may include more thanone test gap, with all gaps preferably wired in parallel via thepad/ground wiring; an example with multiple test gaps appears in FIG.45). The pad/ground wiring comprises low-resistance wiring from one sideof the test gap(s) to the pad, and from the other side of the testgap(s) to a permanent or virtual ground. Points of effective groundinclude either supply rail, as well as any electrical structure that canconduct to the substrate under appropriate e-beam charging conditions(e.g., a p+ diode to NWELL that becomes positively charged during e-beammeasurement). Virtual grounding can be accomplished by connecting to anode with sufficient capacitance to avoid discharge during e-beammeasurement, and thus act as a source and/or sink for electrons duringthe measurement.

As depicted in FIGS. 12-13, the general structure of anopen[/resistance]-configured, NCEM-enabled fill cell preferably includesfour overlaid components: (i) “standard” patterning; (ii) a NCEM pad;(iii) “test area” patterning; and (iv) pad/ground wiring. As with theshorts, standard patterning is that which appears in essentially all ofthe standard library cells, such as supply rails, etc. Similarly, theNCEM pads can take a variety of shapes/patterns, as is non-exhaustivelyexemplified in FIGS. 9A-9F and Grandparent FIGS. 9G-9IIII. Standardstructures used for test structure patterning are depicted in FIGS.28-36, and may include snake, overlap, stitch, etc. As with the shorts,the pad/ground wiring for opens comprises low-resistance wiring from oneside of the test structure patterning to the pad, and from the otherside of the test structure patterning to a permanent or virtual ground.Open-configured, NCEM-enabled fill cells can, and often do, includemultiple test areas, in which case the pad/ground wiring connects allrelevant test structures in a series-connected chain.

In cases where the NCEM-enabled fill cells will be used with a highlyregular style cell library, an additional constraint on the NCEM-enabledfill cells is that they preferably conform, as closely as reasonablypossible, to the regular patterns used for the library's functionalcells. Preferred methods for measuring compliance with regular patterns,and/or constructing pattern-compliant cells, are described in U.S. Pat.Applic. Nos. 61/887,271 (“Template Based Design with LibAnalyzer”) and62/186,677 (“Template Based Design with LibAnalyzer”), both to Langneseet al., and both incorporated by reference herein. As those skilled inthe art will appreciate, close, if not perfect, pattern compliance isfeasible for those portions of the fill cell that do not affect thestructure(s) or fail mode(s) to be evaluated. In general, however,perfect pattern compliance will prove infeasible for a several reasons.First, the structure to-be-evaluated may not, itself, be an “allowable”pattern (e.g., the pattern rules for the library may not allow anystructure that spaces a GATE tip from a GATECNT side at minimum designrule dimensions, thus dictating that the“GATE-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cell” willnecessarily include at least one pattern violation). Second, DOEstypically involve several small variations in at least oneminimum-spaced dimension, whereas regular patterning rules willtypically only permit one of the variants. And third, the patterningused for the NCEM pad is preferably selected to match the operationalcapabilities of the scanner, but may well violate the library's patternregularity constraints. Thus, ignoring these “necessary” patternregularity violations, NCEM-enabled fill cells for use with highlyregular libraries will preferably contain very few, if any, additionalpattern regularity violations.

Reference is now made to FIGS. 14-15, which depict plan views of twoexemplary test area geometries for tip-to-tip-short-configured,NCEM-enabled fill cells. Cells that utilize these geometricconfigurations may include:

-   -   AA-tip-to-tip-short-configured, NCEM-enabled fill cells [e.g.,        FIGS. 82A-C and Grandparent FIGS. 1299-1326];    -   AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 83A-C and Grandparent FIGS. 1328-1405];    -   AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   AACNT-TS-tip-to-tip-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 84A-C and Grandparent FIGS. 1407-1412];    -   TS-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   GATE-tip-to-tip-short-configured, NCEM-enabled fill cells [e.g.,        FIGS. 85A-C and Grandparent FIGS. 1414-1461];    -   GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill        cells;    -   GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 86A-C and Grandparent FIGS. 1463-1548];    -   GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill        cells;    -   M1-tip-to-tip-short-configured, NCEM-enabled fill cells [e.g.,        FIGS. 87A-C and Grandparent FIGS. 1550-1556];    -   V0-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   V1-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   M2-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   M3-tip-to-tip-short-configured, NCEM-enabled fill cells;    -   V2-tip-to-tip-short-configured, NCEM-enabled fill cells; and,    -   M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells.    -   [As persons skilled in the art will understand, for interconnect        layers 2 and higher, any NCEM-enabled fill cell of type “M_(x)-        . . . ” can also be formed as a corresponding “M_((x+n))- . . .        ” cell, any “V_(x)- . . . ” cell can also be formed as a        corresponding “V_((x+n))- . . . ” cell, any “M_(x)-V_((x+1))- .        . . ” cell can also be formed as a corresponding        “M_((x+n))-V_((x+n+1))- . . . ” cell, and any “M_(x)-V_((x−1))-        . . . ” cell can also be formed as a corresponding        “M_((x+n))-V_((x+n−1))- . . . ” cell, assuming that the        process-in-question supports the referenced interconnect layers.        The present description should be read as including all such        possible higher interconnect layer, and layer combination,        cells, in all available failure types and geometric        configurations.]        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        lateral and/or gap dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 16, which depicts a plan view of exemplarytest area geometry for tip-to-side-short-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   AA-tip-to-side-short-configured, NCEM-enabled fill cells;    -   AACNT-tip-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIG. 45];    -   AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;    -   GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 49, 50, 75 and Grandparent FIGS. 1085-1119];    -   GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill        cells [e.g., FIGS. 79A-C and Grandparent FIGS. 1202-1238];    -   GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 76A-C and Grandparent FIGS. 1121-1149];    -   TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 80A-C and Grandparent FIGS. 1240-1263];    -   GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill        cells [FIGS. 77A-C and Grandparent FIGS. 1151-1188];    -   GATECNT-AACNT-TS-tip-to-side-short-configured, NCEM-enabled fill        cells [FIGS. 78A-C and Grandparent FIGS. 1190-1200];    -   M1-tip-to-side-short-configured, NCEM-enabled fill cells [e.g.,        FIGS. 81A-C and Grandparent FIGS. 1265-1297];    -   V0-tip-to-side-short-configured, NCEM-enabled fill cells;    -   M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;    -   V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;    -   V1-tip-to-side-short-configured, NCEM-enabled fill cells;    -   M2-tip-to-side-short-configured, NCEM-enabled fill cells;    -   M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;    -   V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;    -   M3-tip-to-side-short-configured, NCEM-enabled fill cells;    -   V2-tip-to-side-short-configured, NCEM-enabled fill cells; and,    -   M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        lateral and/or gap dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 17, which depicts a plan view of exemplarytest area geometry for side-to-side-short-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   AA-side-to-side-short-configured, NCEM-enabled fill cells;    -   AACNT-side-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 62A-C and Grandparent FIGS. 787-804];    -   AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;    -   AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill        cells [e.g., FIGS. 63A-C and Grandparent FIGS. 806-832];    -   GATE-side-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 64A-C and Grandparent FIGS. 834-859];    -   GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill        cells [e.g., FIGS. 67A-C and Grandparent FIGS. 887-903];    -   TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 70A-C and Grandparent FIGS. 938-1040];    -   GATECNT-side-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 65A-C and Grandparent FIGS. 861-872];    -   GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill        cells [e.g., FIGS. 47(a)-(c), 66A-C and Grandparent FIGS.        874-885];    -   M1-side-to-side-short-configured, NCEM-enabled fill cells [e.g.,        FIGS. 68A-C and Grandparent FIGS. 905-928];    -   V0-side-to-side-short-configured, NCEM-enabled fill cells;    -   M1-V0-side-to-side-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 69A-C and Grandparent FIGS. 930-936];    -   V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;    -   V1-side-to-side-short-configured, NCEM-enabled fill cells;    -   M2-side-to-side-short-configured, NCEM-enabled fill cells;    -   M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;    -   V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;    -   M3-side-to-side-short-configured, NCEM-enabled fill cells;    -   V2-side-to-side-short-configured, NCEM-enabled fill cells; and,    -   M3-V2-side-to-side-short-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        lateral and/or gap dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIGS. 18, 19, 20, 21, and 22, each of whichdepicts a plan view of exemplary test area geometry forL-shape-interlayer-short-configured, NCEM-enabled fill cells. Cells thatutilize these geometric configurations may include:

-   -   AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;    -   AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled        fill cells;    -   M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fill        cells;    -   M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fill        cells; and,    -   M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fill        cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area, or by        varying other, same- or adjacent-layer patterning within the        expanded test area.

Reference is now made to FIG. 23, which depicts a plan view of exemplarytest area geometry for diagonal-short-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   AA-diagonal-short-configured, NCEM-enabled fill cells;    -   TS-diagonal-short-configured, NCEM-enabled fill cells;    -   AACNT-diagonal-short-configured, NCEM-enabled fill cells;    -   AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;    -   GATE-diagonal-short-configured, NCEM-enabled fill cells;    -   GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;    -   GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;    -   GATECNT-diagonal-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 57A-C and Grandparent FIGS. 496-554];    -   GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 58A-C and Grandparent FIGS. 556-632];    -   M1-diagonal-short-configured, NCEM-enabled fill cells;    -   V0-diagonal-short-configured, NCEM-enabled fill cells;    -   M1-V0-diagonal-short-configured, NCEM-enabled fill cells;    -   V1-M1-diagonal-short-configured, NCEM-enabled fill cells;    -   V1-diagonal-short-configured, NCEM-enabled fill cells;    -   M2-diagonal-short-configured, NCEM-enabled fill cells;    -   M2-V1-diagonal-short-configured, NCEM-enabled fill cells;    -   M3-diagonal-short-configured, NCEM-enabled fill cells;    -   V2-M2-diagonal-short-configured, NCEM-enabled fill cells;    -   V2-diagonal-short-configured, NCEM-enabled fill cells; and,    -   M3-V2-diagonal-short-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g., gap        dimension and/or gap angle), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIGS. 24, 25, and 26, each of which depicts aplan view of exemplary test area geometry for corner-short-configured,NCEM-enabled fill cells. These configurations differ from the diagonalconfiguration because, in these corner configurations, at least one ofthe first and/or second features is non-rectangular. Cells that utilizethese geometric configurations may include:

-   -   AA-corner-short-configured, NCEM-enabled fill cells;    -   AACNT-corner-short-configured, NCEM-enabled fill cells;    -   AACNT-AA-corner-short-configured, NCEM-enabled fill cells;    -   GATE-corner-short-configured, NCEM-enabled fill cells;    -   GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;    -   GATECNT-TS-corner-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 55A-C and Grandparent FIGS. 288-685];    -   GATECNT-corner-short-configured, NCEM-enabled fill cells;    -   GATECNT-AA-corner-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 54A-C and Grandparent FIGS. 264-286];    -   GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;    -   M1-corner-short-configured, NCEM-enabled fill cells [e.g., FIGS.        56A-C and Grandparent FIGS. 417-494];    -   V0-corner-short-configured, NCEM-enabled fill cells;    -   M1-V0-corner-short-configured, NCEM-enabled fill cells;    -   V1-M1-corner-short-configured, NCEM-enabled fill cells;    -   V1-corner-short-configured, NCEM-enabled fill cells;    -   M2-corner-short-configured, NCEM-enabled fill cells;    -   M2-V1-corner-short-configured, NCEM-enabled fill cells;    -   M3-corner-short-configured, NCEM-enabled fill cells;    -   V2-M2-corner-short-configured, NCEM-enabled fill cells;    -   V2-corner-short-configured, NCEM-enabled fill cells; and,    -   M3-V2-corner-short-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g., gap        dimension and/or gap angle), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 27, which depicts a plan view of exemplarytest area geometry for interlayer-overlap-short-configured, NCEM-enabledfill cells. Cells that utilize this geometric configuration may include:

-   -   GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill        cells [e.g., FIGS. 60A-C and Grandparent FIGS. 693-734];    -   GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled        fill cells [e.g., FIGS. 59A-C and Grandparent FIGS. 634-691];    -   GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled        fill cells;    -   GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled        fill cells;    -   V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled        fill cells;    -   M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill        cells;    -   V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill        cells; and,    -   M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill        cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        major and/or minor dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 28, which depicts a plan view of exemplarytest area geometry for via-chamfer-short-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill        cells;    -   V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 52A-C and Grandparent FIGS. 53-256];    -   V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;    -   V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;        and,    -   V3-M3-via-chamfer-short-configured, NCEM-enabled fill cells        [e.g., FIGS. 53A-B and Grandparent FIGS. 258-262].        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g., gap        and/or lateral dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 29, which depicts a plan view of exemplarytest area geometry for merged-via-short-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   V0-merged-via-short-configured, NCEM-enabled fill cells;    -   V1-merged-via-short-configured, NCEM-enabled fill cells; and,    -   V2-merged-via-short-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g., gap        and/or lateral dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 30, which depicts a plan view of exemplarytest area geometry for snake-open-configured, NCEM-enabled fill cells.Cells that utilize this geometric configuration may include:

-   -   AA-snake-open-configured, NCEM-enabled fill cells;    -   TS-snake-open-configured, NCEM-enabled fill cells;    -   AACNT-snake-open-configured, NCEM-enabled fill cells;    -   GATE-snake-open-configured, NCEM-enabled fill cells [e.g., FIGS.        71A-C and Grandparent FIGS. 1042-1048];    -   GATECNT-snake-open-configured, NCEM-enabled fill cells;    -   V0-snake-open-configured, NCEM-enabled fill cells;    -   M1-snake-open-configured, NCEM-enabled fill cells [e.g., FIGS.        44, 72, and Grandparent FIGS. 1050-1066];    -   M1-V0-AACNT-snake-open-configured, NCEM-enabled fill cells        [e.g., FIGS. 73A-C and Grandparent FIGS. 1068-1071];    -   V1-snake-open-configured, NCEM-enabled fill cells;    -   M2-snake-open-configured, NCEM-enabled fill cells;    -   V2-snake-open-configured, NCEM-enabled fill cells; and,    -   M3-snake-open-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        length, width, spacing, etc.), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIGS. 31-32, which each depict plan views ofexemplary test area geometries for stitch-open-configured, NCEM-enabledfill cells. Cells that utilize these geometric configurations mayinclude:

-   -   AA-stitch-open-configured, NCEM-enabled fill cells;    -   TS-stitch-open-configured, NCEM-enabled fill cells;    -   AACNT-stitch-open-configured, NCEM-enabled fill cells;    -   GATECNT-stitch-open-configured, NCEM-enabled fill cells;    -   V0-stitch-open-configured, NCEM-enabled fill cells;    -   M1-stitch-open-configured, NCEM-enabled fill cells [e.g., FIGS.        74A-C and Grandparent FIGS. 1073-1083];    -   V1-stitch-open-configured, NCEM-enabled fill cells;    -   M2-stitch-open-configured, NCEM-enabled fill cells;    -   V2-stitch-open-configured, NCEM-enabled fill cells; and,    -   M3-stitch-open-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        major and/or minor dimension), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 33, which depicts a plan view of exemplarytest area geometry for via-open-configured, NCEM-enabled fill cells.Cells that utilize this geometric configuration may include:

-   -   AACNT-TS-via-open-configured, NCEM-enabled fill cells [e.g.,        FIGS. 89A-C and Grandparent FIGS. 1630-1673];    -   AACNT-AA-via-open-configured, NCEM-enabled fill cells [FIGS.        88A-C and Grandparent FIGS. 1558-1628];    -   TS-AA-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        98A-C and Grandparent FIGS. 2316-2330];    -   GATECNT-GATE-via-open-configured, NCEM-enabled fill cells [e.g.,        FIGS. 48, 92, and Grandparent FIGS. 1700-2005];    -   GATECNT-AACNT-via-open-configured, NCEM-enabled fill cells        [e.g., FIGS. 90A-C and Grandparent FIGS. 1675-1682];    -   GATECNT-AACNT-GATE-via-open-configured, NCEM-enabled fill cells        [e.g., FIGS. 91A-C and Grandparent FIGS. 1684-1698];    -   V0-GATECNT-via-open-configured, NCEM-enabled fill cells [e.g.,        FIGS. 101A-C and Grandparent FIGS. 2376-2439];    -   V0-AA-via-open-configured, NCEM-enabled fill cells;    -   V0-TS-via-open-configured, NCEM-enabled fill cells;    -   V0-AACNT-via-open-configured, NCEM-enabled fill cells [e.g.,        FIGS. 100A-C and Grandparent FIGS. 2346-2374];    -   V0-GATE-via-open-configured, NCEM-enabled fill cells;    -   V0-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        99A-C and Grandparent FIGS. 2332-2344];    -   M1-V0-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        93A-C and Grandparent FIGS. 2007-2200];    -   V1-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        102A-C and Grandparent FIGS. 2441A-C];    -   V1-M1-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        103A-C and Grandparent FIGS. 2443-2459];    -   V1-M2-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        94A-B and Grandparent FIGS. 2222-2256];    -   M1-GATECNT-via-open-configured, NCEM-enabled fill cells;    -   M1-AANCT-via-open-configured, NCEM-enabled fill cells;    -   V2-M2-via-open-configured, NCEM-enabled fill cells;    -   V2-M3-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        95A-B and Grandparent FIGS. 2258-2274];    -   V3-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        104A-B and Grandparent FIGS. 2461A-B];    -   M4-V3-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        96A-B and Grandparent FIGS. 2276-2296]; and,    -   M5-V4-via-open-configured, NCEM-enabled fill cells [e.g., FIGS.        97A-B and Grandparent FIGS. 2298-2314].        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        upper extension, lower extension, and/or via size/shape), or by        varying other, same- or adjacent-layer patterning within the        expanded test area.

Reference is now made to FIGS. 34 and 35, which respectively depict planand cross-sectional views of exemplary test area geometry formetal-island-open-configured, NCEM-enabled fill cells. Cells thatutilize this geometric configuration may include:

-   -   M1-metal-island-open-configured, NCEM-enabled fill cells;    -   M2-metal-island-open-configured, NCEM-enabled fill cells; and,    -   M3-metal-island-open-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g.,        major extension, minor extension, and/or size(s)/shape(s) of        lower and/or upper stacked vias), or by varying other, same- or        adjacent-layer patterning within the expanded test area.

Reference is now made to FIG. 36, which depicts a plan view of exemplarytest area geometry for merged-via-open-configured, NCEM-enabled fillcells. Cells that utilize this geometric configuration may include:

-   -   V0-merged-via-open-configured, NCEM-enabled fill cells [e.g.,        FIGS. 61A-C and Grandparent FIGS. 736-785];    -   V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;    -   V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;    -   V1-merged-via-open-configured, NCEM-enabled fill cells;    -   V2-merged-via-open-configured, NCEM-enabled fill cells;    -   V1-M1-merged-via-open-configured, NCEM-enabled fill cells; and,    -   V2-M2-merged-via-open-configured, NCEM-enabled fill cells.        DOEs of these structures are preferably constructed by varying        the dimensional parameters that define the test area (e.g., gap        dimension, lateral dimension, and/or size/shape of one or both        vias), or by varying other, same- or adjacent-layer patterning        within the expanded test area.

Reference is now made to FIG. 37, which shows exemplary expanded testarea geometry from a 1^(st) variant of a NCEM-enabled fill cell, and toFIG. 38, which shows exemplary expanded test area geometry from a 2^(nd)variant of a NCEM-enabled fill cell. These figures, and the two thatfollow, illustrate the computation of the PSR between (the depictedlayer, which could be any layer, of) the 1^(st) variant and the 2^(nd)variant. FIG. 39 shows the logical AND of (depicted layer) patterningwithin both expanded test areas (of FIGS. 37 & 38). FIG. 40 shows thelogical OR of patterning within both expanded test areas (of FIGS. 37 &38). The PSR (pattern similarity ratio) is then defined as the arearatio of the AND patterns to the OR patterns. Conceptually, PSR is ameasure of how much of the patterning within the common expanded testareas is new. In other words, if the two cells are identical (within thelayer(s)-at-issue, and within the common expanded test area), then thePSR will be 1.0. Conversely, if they share no common patterning (withinthe layer(s)-at-issue, and within the common expanded test area), thenthe AND patterns will be nil, and the PSR will be 0.0.

Reference is now made to FIG. 41, which depicts an exemplary processflow, suitable for use in connection with certain embodiments of theinvention. At FF1, an initial set of product masks is produced (orotherwise obtained); these initial product masks include a firstcollection of NCEM-enabled fill cells.

At FF2, processing of wafers is initiated using the initial productmasks. Such processing preferably includes at least FEOL and/or MOLprocessing, but may also include BEOL processing. Before FF3, NCEMmeasurements are preferably obtained from some or all of theNCEM-enabled fill cells on the partially-processed initial productwafers.

At FF3, some or all of the obtained NCEM measurements are “used” tocontinue processing of the initial product wafers. Such “use” mayinclude determining whether to continue or abandon processing of one ormore of the wafers, modifying one or more processing, inspection ormetrology steps in the continued processing of one or more of the wafers(and/or other product wafers currently being manufactured using processflows relevant to observed manufacturing failures), and/or performingadditional processing, metrology or inspection steps on one or more ofthe wafers (and/or other product wafers currently being manufacturedusing process flows relevant to observed manufacturing failures).

At FF4, final product masks are produced (or otherwise obtained) “using”at least some of the NCEM measurements obtained during the processing ofinitial product wafers. Here, such “use” preferably includes selectingand instantiating a second collection of NCEM-enabled fill cells that isbetter and/or optimally matched to failure modes observed duringprocessing of the initial product wafers. For example, if the firstcollection of NCEM-enabled fill cells includedGATE-side-to-side-short-configured cells, yet no GATE side-to-sideshorts were observed during processing of the initial product wafers,then the second collection of NCEM-enabled fill cells would preferablyomit GATE-side-to-side-short-configured cells, and instead replace themwith other NCEM-enabled fill cells that are better matched to theobserved or expected failure modes on the final product wafers.

At FF5, processing of wafers is initiated using the final product masks.Such processing preferably includes at least FEOL and/or MOL processing,but may also include BEOL processing. Before FF6, NCEM measurements arepreferably obtained from some or all of the NCEM-enabled fill cells onthe partially-processed final product wafers.

At FF6, some or all of the obtained NCEM measurements are “used” tocontinue processing of the final product wafers. Such “use” may includedetermining whether to continue or abandon processing of one or more ofthe wafers, modifying one or more processing, inspection or metrologysteps in the continued processing of one or more of the wafers (and/orother product wafers currently being manufactured using process flowsrelevant to observed manufacturing failures), and/or performingadditional processing, metrology or inspection steps on one or more ofthe wafers (and/or other product wafers currently being manufacturedusing process flows relevant to observed manufacturing failures).

Reference is now made to FIG. 42, which depicts an exemplary processflow for obtaining and (optionally) using measurements from mesh-styleNCEM pads. As persons skilled in the art will appreciate, this processcan be utilized either with or without NCEM-enabled fill cells; in otherwords, the mesh-style NCEM pads can be instantiated within NCEM-enabledfill cells, but can also be instantiated anywhere on a chip, die, orwafer. Furthermore, as persons skilled in the art will also appreciate,the order of steps FF7 & FF8 can be reversed, or performedsimultaneously, to accommodate processes where the order of AACNT &GATECNT patterning is different.

Reference is now made to FIG. 43, which depicts another exemplaryprocess flow, suitable for use in accordance with certain embodiments ofthe invention. At GG1, test mask (e.g., masks to produce a “test” or“engineering” wafer) are produced or otherwise obtained; such test masksinclude a first collection of NCEM-enabled fill cells.

At GG2, processing of the test wafer(s) is initiated. Such processingpreferably includes FEOL and/or MOL processing, but may also includeBEOL processing.

At GG3, NCEM measurements are obtained from NCEM-enabled fill cells onthe partially-processed test wafer(s).

At GG4, the obtained measurements are “used” to select a secondcollection of NCEM-enabled fill cells (preferably a subset of the firstcollection) for instantiation on product wafers. Here, such “use”preferably includes selecting a second collection of NCEM-enabled fillcells that, given the available fill cell space on the product wafers,is optimally matched to failure modes observed during processing of thetest product wafers. For example, if the first collection ofNCEM-enabled fill cells included GATE-side-to-side-short-configuredcells, yet no GATE side-to-side shorts were observed during processingof test wafers, then the second collection of NCEM-enabled fill cellswould preferably omit GATE-side-to-side-short-configured cells.

At GG5, product masks that include the second collection of NCEM-enabledfill cells are produced, or otherwise obtained.

At GG6, processing of the product wafer(s) is initiated. Such processingpreferably includes at least FEOL and/or MOL processing, but may alsoinclude BEOL processing. Prior to GG7, NCEM measurements are obtainedfrom at least some of the NCEM-enabled fill cells on thepartially-processed product wafer(s).

At GG7, some or all of the obtained NCEM measurements are “used” tocontinue processing of the product wafer(s). Such “use” may includedetermining whether to continue or abandon processing of one or more ofthe product wafers, modifying one or more processing, inspection ormetrology steps in the continued processing of one or more of theproduct wafers (and/or other product wafers currently being manufacturedusing process flows relevant to observed manufacturing failures), and/orperforming additional processing, metrology or inspection steps on oneor more of the product wafers (and/or other product wafers currentlybeing manufactured using process flows relevant to observedmanufacturing failures).

In certain embodiments, FF1-3 and/or GG5-7 could be practiced asstand-alone process flows.

Reference is now made to FIG. 44, which depicts a plan view of anexemplary M1-snake-open-configured, NCEM-enabled fill cell. This cellcontains a left-facing-E-shaped NCEM pad, a snake-open-configured testarea, and is NCEM-enabled to detect the following failure mode: M1 snakeopen. In the depicted configuration, a passing response is groundedmetal=bright NCEM, whereas a failing response is floating pad=dark NCEM.

Reference is now made to FIG. 45, which depicts a plan view of anexemplary AACNT-tip-to-side-short-configured, NCEM-enabled fill cell.This cell contains four test areas, and an E-shaped NCEM pad thatoverlies the test areas. It is NC-configured for inline measurement ofthe following failure mode: AACNT tip-to-side short. In the depictedconfiguration, a passing response is floating AA contacts=dark NCEM,whereas a failing response is a short to grounded contact layer=brightNCEM.

Reference is now made to FIGS. 46A-C, which respectively depict planviews of—(A) all layers; (B) NWELL, AA, GATE, GATECNT, TS, and AACNTlayers; (C) V0 and M1 layers—of an exemplaryTS-GATE-side-to-side-short-configured, NCEM-enabled fill cell of typePDF_D_VCI_V16_14S1_01. This cell utilizes a composite NCEM pad, asdepicted in FIG. 9E.

Reference is now made to FIGS. 47A-C, which respectively depict planviews of—(A) all layers; (B) NWELL, AA, GATE, GATECNT, TS, and AACNTlayers; (C) V0 and M1 layers—of an exemplaryGATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cell oftype PDF_D_VCI_V16_14S1_05. This cell also utilizes a composite NCEMpad.

Reference is now made to FIGS. 48A-C, which respectively depict planviews of—(A) all layers; (B) NWELL, AA, GATE, GATECNT, TS, and AACNTlayers; (C) V0 and M1 layers—of an exemplaryGATECNT-GATE-via-open-configured, NCEM-enabled fill cell of typePDF_D_VCI_V16_14S1_08. This cell also utilizes a composite NCEM pad.

Reference is now made to FIGS. 49A-C, which respectively depict planviews of—(A) all layers; (B) NWELL, AA, GATE, GATECNT, TS, and AACNTlayers; (C) V0 and M1 layers—of an exemplaryGATE-AA-tip-to-side-short-configured, NCEM-enabled fill cell of typePDF_D_VCI_V16_14S1_11. This cell also utilizes a composite NCEM pad.

Reference is now made to FIGS. 50(A)-(C), which respectively depict planviews of—(A) all layers; (B) NWELL, AA, GATE, GATECNT, TS, and AACNTlayers; (C) V0 and M1 layers—of another exemplaryGATE-AA-tip-to-side-short-configured, NCEM-enabled fill cell of typePDF_D_VCI_V16_14S1_12. This cell also utilizes a composite NCEM pad.

FIGS. 52A-C, 53A-C, 54A-C, et seq., which depict additional examples ofNCEM-enabled fill cells, utilize the same layer shadings/patternsdepicted in FIG. 51.

Grandparent FIGS. 160-162 depict three variants of the same cell.Grandparent FIGS. 161(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 163-165 depict three variants of the same cell.Grandparent FIGS. 164(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 166-168 depict three variants of the same cell.Grandparent FIGS. 167(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 169-171 depict three variants of the same cell.Grandparent FIGS. 170(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 172-173 depict two variants of the same cell.Grandparent FIGS. 173(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 174-175 depict two variants of the same cell.Grandparent FIGS. 175(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 176-177 depict two variants of the same cell.Grandparent FIGS. 177(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 178-179 depict two variants of the same cell.Grandparent FIGS. 179(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 180-181 depict two variants of the same cell.Grandparent FIGS. 181(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 182-183 depict two variants of the same cell.Grandparent FIGS. 183(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 184-185 depict two variants of the same cell.Grandparent FIGS. 184(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 191-193 depict three variants of the same cell.Grandparent FIGS. 192(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 194-196 depict three variants of the same cell.Grandparent FIGS. 195(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 197-199 depict three variants of the same cell.Grandparent FIGS. 198(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 200-202 depict three variants of the same cell.Grandparent FIGS. 201(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 203-205 depict three variants of the same cell.Grandparent FIGS. 204(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 206-208 depict three variants of the same cell.Grandparent FIGS. 207(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 209-211 depict three variants of the same cell.Grandparent FIGS. 210(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 212-214 depict three variants of the same cell.Grandparent FIGS. 213(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 215-217 depict three variants of the same cell.Grandparent FIGS. 216(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 218-220 depict three variants of the same cell.Grandparent FIGS. 219(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 221-223 depict three variants of the same cell.Grandparent FIGS. 222(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 224-226 depict three variants of the same cell.Grandparent FIGS. 225(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 227-229 depict three variants of the same cell.Grandparent FIGS. 228(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 230-232 depict three variants of the same cell.Grandparent FIGS. 231(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 233-235 depict three variants of the same cell.Grandparent FIGS. 234(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 236-238 depict three variants of the same cell.Grandparent FIGS. 237(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 239-241 depict three variants of the same cell.Grandparent FIGS. 240(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 242-244 depict three variants of the same cell.Grandparent FIGS. 243(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 245-247 depict three variants of the same cell.Grandparent FIGS. 246(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 248-250 depict three variants of the same cell.Grandparent FIGS. 249(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 251-253 depict three variants of the same cell.Grandparent FIGS. 252(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 254-256 depict three variants of the same cell.Grandparent FIGS. 255(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 257-259 depict three variants of the same cell.Grandparent FIGS. 258(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 260-262 depict three variants of the same cell.Grandparent FIGS. 261(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 263-265 depict three variants of the same cell.Grandparent FIGS. 264(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 266-268 depict three variants of the same cell.Grandparent FIGS. 267(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 269-271 depict three variants of the same cell.Grandparent FIGS. 219(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 272-274 depict three variants of the same cell.Grandparent FIGS. 273(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 275-277 depict three variants of the same cell.Grandparent FIGS. 276(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 278-280 depict three variants of the same cell.Grandparent FIGS. 279(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 281-283 depict three variants of the same cell.Grandparent FIGS. 2821(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 284-286 depict three variants of the same cell.Grandparent FIGS. 285(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 363-365 depict three variants of the same cell.Grandparent FIGS. 363(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 366-368 depict three variants of the same cell.Grandparent FIGS. 367(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 369-371 depict three variants of the same cell.Grandparent FIGS. 369(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 372-374 depict three variants of the same cell.Grandparent FIGS. 372(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 377-379 depict three variants of the same cell.Grandparent FIGS. 378(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 380-382 depict three variants of the same cell.Grandparent FIGS. 381(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 383-385 depict three variants of the same cell.Grandparent FIGS. 384(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 386-388 depict three variants of the same cell.Grandparent FIGS. 387(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 389-391 depict three variants of the same cell.Grandparent FIGS. 390(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 392-394 depict three variants of the same cell.Grandparent FIGS. 393(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 395-397 depict three variants of the same cell.Grandparent FIGS. 396(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 398-400 depict three variants of the same cell.Grandparent FIGS. 399(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 401-403 depict three variants of the same cell.Grandparent FIGS. 402(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 404-406 depict three variants of the same cell.Grandparent FIGS. 405(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 407-409 depict three variants of the same cell.Grandparent FIGS. 408(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 410-412 depict three variants of the same cell.Grandparent FIGS. 411(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 413-415 depict three variants of the same cell.Grandparent FIGS. 414(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 476-477 depict two variants of the same cell.Grandparent FIGS. 477(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 478-479 depict two variants of the same cell.Grandparent FIGS. 479(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 480-481 depict two variants of the same cell.Grandparent FIGS. 481(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 482-483 depict two variants of the same cell.Grandparent FIGS. 483(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 487-489 depict three variants of the same cell.Grandparent FIGS. 488(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 492-494 depict three variants of the same cell.Grandparent FIGS. 493(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 519-533 depict variants of the same cell. GrandparentFIGS. 519(A)-(C) show the nominal case, whereas the other figuresrepresent intentionally misaligned conditions.

Grandparent FIGS. 522-536 depict variants of the same cell. GrandparentFIGS. 522(A)-(C) show the nominal case, whereas the other figuresrepresent intentionally misaligned conditions.

Grandparent FIGS. 525-539 depict variants of the same cell. GrandparentFIGS. 525(A)-(C) show the nominal case, whereas the other figuresrepresent intentionally misaligned conditions.

Grandparent FIGS. 528-542 depict variants of the same cell. GrandparentFIGS. 528(A)-(C) show the nominal case, whereas the other figuresrepresent intentionally misaligned conditions.

Grandparent FIGS. 543-545 depict three variants of the same cell.Grandparent FIGS. 544(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 546-548 depict three variants of the same cell.Grandparent FIGS. 547(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 549-551 depict three variants of the same cell.Grandparent FIGS. 550(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 552-554 depict three variants of the same cell.Grandparent FIGS. 553(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 599-601 depict three variants of the same cell.Grandparent FIGS. 600(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 602-604 depict three variants of the same cell.Grandparent FIGS. 603(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 605-607 depict three variants of the same cell.Grandparent FIGS. 606(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 608-610 depict three variants of the same cell.Grandparent FIGS. 609(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 611-613 depict three variants of the same cell.Grandparent FIGS. 612(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 614-616 depict three variants of the same cell.Grandparent FIGS. 615(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 617-619 depict three variants of the same cell.Grandparent FIGS. 618(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 621-623 depict three variants of the same cell.Grandparent FIGS. 622(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 624-626 depict three variants of the same cell.Grandparent FIGS. 625(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 627-629 depict three variants of the same cell.Grandparent FIGS. 628(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 630-632 depict three variants of the same cell.Grandparent FIGS. 631(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 668-670 depict three variants of the same cell.Grandparent FIGS. 669(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 756-758 depict three variants of the same cell.Grandparent FIGS. 757(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 759-760 depict two variants of the same cell.Grandparent FIGS. 759(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 762-764 depict three variants of the same cell.Grandparent FIGS. 764(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 765-767 depict three variants of the same cell.Grandparent FIGS. 766(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 768-770 depict three variants of the same cell.Grandparent FIGS. 769(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 771-773 depict three variants of the same cell.Grandparent FIGS. 772(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 774-776 depict three variants of the same cell.Grandparent FIGS. 774(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 777-779 depict three variants of the same cell.Grandparent FIGS. 779(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 780-782 depict three variants of the same cell.Grandparent FIGS. 780(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 783-785 depict three variants of the same cell.Grandparent FIGS. 785(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 799-801 depict three variants of the same cell.Grandparent FIGS. 800(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 802-804 depict three variants of the same cell.Grandparent FIGS. 803(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 805-807 depict three variants of the same cell.Grandparent FIGS. 806(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 808-810 depict three variants of the same cell.Grandparent FIGS. 809(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 811-813 depict three variants of the same cell.Grandparent FIGS. 812(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 814-816 depict three variants of the same cell.Grandparent FIGS. 815(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 817-819 depict three variants of the same cell.Grandparent FIGS. 818(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 820-822 depict three variants of the same cell.Grandparent FIGS. 821(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 830-832 depict three variants of the same cell.Grandparent FIGS. 831(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 860-862 depict three variants of the same cell.Grandparent FIGS. 861(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 863-865 depict three variants of the same cell.Grandparent FIGS. 864(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 866-867 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 868-869 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 870-872 depict three variants of the same cell.Grandparent FIGS. 871(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 873-875 depict three variants of the same cell.Grandparent FIGS. 874(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 876-878 depict three variants of the same cell.Grandparent FIGS. 877(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 880-882 depict three variants of the same cell.Grandparent FIGS. 881(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 883-885 depict three variants of the same cell.Grandparent FIGS. 884(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 886-888 depict three variants of the same cell.Grandparent FIGS. 887(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 889-891 depict three variants of the same cell.Grandparent FIGS. 890(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 892-894 depict three variants of the same cell.Grandparent FIGS. 893(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 895-897 depict three variants of the same cell.Grandparent FIGS. 896(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 898-900 depict three variants of the same cell.Grandparent FIGS. 899(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 901-903 depict three variants of the same cell.Grandparent FIGS. 902(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1003-1005 depict three variants of the same cell.Grandparent FIGS. 1004(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1006-1008 depict three variants of the same cell.Grandparent FIGS. 1007(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1009-1011 depict three variants of the same cell.Grandparent FIGS. 1010(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1081-1082 depict two variants of the same cell.Grandparent FIGS. 1081(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1096-1098 depict three variants of the same cell.Grandparent FIGS. 1097(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1099-1101 depict three variants of the same cell.Grandparent FIGS. 1100(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1102-1104 depict three variants of the same cell.Grandparent FIGS. 1103(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1105-1107 depict three variants of the same cell.Grandparent FIGS. 1106(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1108-1110 depict three variants of the same cell.Grandparent FIGS. 1109(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1111-1113 depict three variants of the same cell.Grandparent FIGS. 1112(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1114-1116 depict three variants of the same cell.Grandparent FIGS. 1115(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1117-1119 depict three variants of the same cell.Grandparent FIGS. 1118(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1138-1140 depict three variants of the same cell.Grandparent FIGS. 1139(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1141-1143 depict three variants of the same cell.Grandparent FIGS. 1142(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1144-1145 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 1146-1147 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 1150-1152 depict three variants of the same cell.Grandparent FIGS. 1151(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1153-1155 depict three variants of the same cell.Grandparent FIGS. 1154(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1156-1158 depict three variants of the same cell.Grandparent FIGS. 1157(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1159-1161 depict three variants of the same cell.Grandparent FIGS. 1160(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1162-1164 depict three variants of the same cell.Grandparent FIGS. 1163(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1165-1167 depict three variants of the same cell.Grandparent FIGS. 1166(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1168-1170 depict three variants of the same cell.Grandparent FIGS. 1169(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1171-1173 depict three variants of the same cell.Grandparent FIGS. 1172(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1174-1176 depict three variants of the same cell.Grandparent FIGS. 1175(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1177-1179 depict three variants of the same cell.Grandparent FIGS. 1178(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1189-1191 depict three variants of the same cell.Grandparent FIGS. 1190(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1192-1194 depict three variants of the same cell.Grandparent FIGS. 1193(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1195-1197 depict three variants of the same cell.Grandparent FIGS. 1196(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1198-1200 depict three variants of the same cell.Grandparent FIGS. 1199(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1201-1203 depict two variants of the same cell.Grandparent FIGS. 1202(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1204-1206 depict three variants of the same cell.Grandparent FIGS. 1205(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1207-1209 depict three variants of the same cell.Grandparent FIGS. 1207(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1210-1212 depict three variants of the same cell.Grandparent FIGS. 1210(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1213-1215 depict three variants of the same cell.Grandparent FIGS. 1213(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1216-1218 depict three variants of the same cell.Grandparent FIGS. 1216(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1219-1221 depict three variants of the same cell.Grandparent FIGS. 1220(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1222-1224 depict three variants of the same cell.Grandparent FIGS. 1223(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1225-1227 depict three variants of the same cell.Grandparent FIGS. 1226(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1228-1230 depict three variants of the same cell.Grandparent FIGS. 1229(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1231-1233 depict three variants of the same cell.Grandparent FIGS. 1232(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1236-1238 depict three variants of the same cell.Grandparent FIGS. 1237(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1239-1242 depict variants of the same cell.Grandparent FIGS. 1242(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1240-1241 depict two variants of the same cell.Grandparent FIGS. 1240(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1249-1251 depict three variants of the same cell.Grandparent FIGS. 1250(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1252-1254 depict three variants of the same cell.Grandparent FIGS. 1253(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1255-1257 depict three variants of the same cell.Grandparent FIGS. 1256(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1258-1260 depict three variants of the same cell.Grandparent FIGS. 1259(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1261-1263 depict three variants of the same cell.Grandparent FIGS. 1262(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1293-1294 depict two variants of the same cell.Grandparent FIGS. 1294(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1295-1296 depict two variants of the same cell.Grandparent FIGS. 1296(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1367-1368 depict two variants of the same cell.Grandparent FIGS. 1368(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1369-1370 depict two variants of the same cell.Grandparent FIGS. 1370(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1371-1372 depict two variants of the same cell.Grandparent FIGS. 1372(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1373-1375 depict three variants of the same cell.Grandparent FIGS. 1374(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1376-1377 depict two variants of the same cell.Grandparent FIGS. 1377(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1378-1379 depict two variants of the same cell.Grandparent FIGS. 1379(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1386-1387 depict two variants of the same cell.Grandparent FIGS. 1386(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1388-1389 depict two variants of the same cell.Grandparent FIGS. 1389(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1390-1391 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 1392-1394 depict three variants of the same cell.Grandparent FIGS. 1392(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1399-1401 depict three variants of the same cell.Grandparent FIGS. 1400(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1402-1404 depict three variants of the same cell.Grandparent FIGS. 1403(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1406-1407 depict two variants of the same cell.Grandparent FIGS. 1407(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1410-1412 depict three variants of the same cell.Grandparent FIGS. 1411(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1451-1452 depict two variants of the same cell.Grandparent FIGS. 1452(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1456-1458 depict three variants of the same cell.Grandparent FIGS. 1457(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1510-1512 depict three variants of the same cell.Grandparent FIGS. 1511(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1513-1515 depict three variants of the same cell.Grandparent FIGS. 1514(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1516-1518 depict three variants of the same cell.Grandparent FIGS. 1517(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1522-1524 depict three variants of the same cell.Grandparent FIGS. 1523(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1525-1527 depict three variants of the same cell.Grandparent FIGS. 1526(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1528-1530 depict three variants of the same cell.Grandparent FIGS. 1528(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1531-1533 depict three variants of the same cell.Grandparent FIGS. 1531(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1534-1536 depict three variants of the same cell.Grandparent FIGS. 1534(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1537-1539 depict three variants of the same cell.Grandparent FIGS. 1537(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1543-1545 depict three variants of the same cell.Grandparent FIGS. 1544(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1546-1548 depict three variants of the same cell.Grandparent FIGS. 1547(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1553-1554 depict two variants of the same cell.Grandparent FIGS. 1554(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1555-1556 depict two variants of the same cell.Grandparent FIGS. 1556(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1557-1559 depict three variants of the same cell.Grandparent FIGS. 1558(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1560-1562 depict three variants of the same cell.Grandparent FIGS. 1561(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1563-1565 depict three variants of the same cell.Grandparent FIGS. 1564(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1566-1568 depict three variants of the same cell.Grandparent FIGS. 1567(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1569-1571 depict three variants of the same cell.Grandparent FIGS. 1570(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1572-1574 depict three variants of the same cell.Grandparent FIGS. 1573(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1575-1577 depict three variants of the same cell.Grandparent FIGS. 1576(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1578-1580 depict three variants of the same cell.Grandparent FIGS. 1579(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1581-1583 depict three variants of the same cell.Grandparent FIGS. 1582(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1584-1586 depict three variants of the same cell.Grandparent FIGS. 1585(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1587-1589 depict three variants of the same cell.Grandparent FIGS. 1588(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1590-1592 depict three variants of the same cell.Grandparent FIGS. 1591(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1593-1595 depict three variants of the same cell.Grandparent FIGS. 1594(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1596-1598 depict three variants of the same cell.Grandparent FIGS. 1597(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1599-1601 depict three variants of the same cell.Grandparent FIGS. 1600(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1602-1604 depict three variants of the same cell.Grandparent FIGS. 1603(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1605-1607 depict three variants of the same cell.Grandparent FIGS. 1606(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1608-1610 depict three variants of the same cell.Grandparent FIGS. 1609(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1611-1613 depict three variants of the same cell.Grandparent FIGS. 1612(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1614-1616 depict three variants of the same cell.Grandparent FIGS. 1615(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1617-1619 depict three variants of the same cell.Grandparent FIGS. 1618(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1620-1622 depict three variants of the same cell.Grandparent FIGS. 1621(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1623-1625 depict three variants of the same cell.Grandparent FIGS. 1624(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1626-1628 depict three variants of the same cell.Grandparent FIGS. 1627(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1646-1647 depict two variants of the same cell.Grandparent FIGS. 1646(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1648-1649 depict two variants of the same cell.Grandparent FIGS. 1648(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1650-1652 depict three variants of the same cell.Grandparent FIGS. 1651(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1653-1655 depict three variants of the same cell.Grandparent FIGS. 1654(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1656-1658 depict three variants of the same cell.Grandparent FIGS. 1657(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1659-1661 depict three variants of the same cell.Grandparent FIGS. 1660(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1663-1664 depict two variants of the same cell.Grandparent FIGS. 1663(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1665-1667 depict three variants of the same cell.Grandparent FIGS. 1666(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1669-1670 depict two variants of the same cell.Grandparent FIGS. 1669(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1671-1673 depict three variants of the same cell.Grandparent FIGS. 1672(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1674-1676 depict three variants of the same cell.Grandparent FIGS. 1675(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1677-1679 depict three variants of the same cell.Grandparent FIGS. 1678(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1680-1682 depict three variants of the same cell.Grandparent FIGS. 1681(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1687-1689 depict three variants of the same cell.Grandparent FIGS. 1688(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1690-1692 depict three variants of the same cell.Grandparent FIGS. 1691(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1693-1695 depict three variants of the same cell.Grandparent FIGS. 1694(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1696-1698 depict three variants of the same cell.Grandparent FIGS. 1697(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1715-1717 depict three variants of the same cell.Grandparent FIGS. 1716(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1718-1720 depict three variants of the same cell.Grandparent FIGS. 1719(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1800-1802 depict three variants of the same cell.Grandparent FIGS. 1801(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1813-1815 depict three variants of the same cell.Grandparent FIGS. 1814(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1816-1818 depict three variants of the same cell.Grandparent FIGS. 1817(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1819-1821 depict three variants of the same cell.Grandparent FIGS. 1820(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1822-1824 depict three variants of the same cell.Grandparent FIGS. 1823(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1825-1827 depict three variants of the same cell.Grandparent FIGS. 1826(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1828-1830 depict three variants of the same cell.Grandparent FIGS. 1829(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1831-1832 depict two variants of the same cell.Grandparent FIGS. 1831(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1833-1835 depict three variants of the same cell.Grandparent FIGS. 1833(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1836-1838 depict three variants of the same cell.Grandparent FIGS. 1836(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1839-1841 depict three variants of the same cell.Grandparent FIGS. 1839(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1842-1844 depict three variants of the same cell.Grandparent FIGS. 1842(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1845-1847 depict three variants of the same cell.Grandparent FIGS. 1845(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1848-1849 depict two variants of the same cell.Grandparent FIGS. 1848(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1850-1852 depict three variants of the same cell.Grandparent FIGS. 1850(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1853-1855 depict three variants of the same cell.Grandparent FIGS. 1853(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1856-1858 depict three variants of the same cell.Grandparent FIGS. 1856(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1859-1861 depict three variants of the same cell.Grandparent FIGS. 1859(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1867-1869 depict three variants of the same cell.Grandparent FIGS. 1868(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1870-1872 depict three variants of the same cell.Grandparent FIGS. 1871(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1873-1875 depict three variants of the same cell.Grandparent FIGS. 1874(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1876-1878 depict three variants of the same cell.Grandparent FIGS. 1877(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1879-1881 depict three variants of the same cell.Grandparent FIGS. 1880(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1882-1884 depict three variants of the same cell.Grandparent FIGS. 1883(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1885-1887 depict three variants of the same cell.Grandparent FIGS. 1886(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1888-1890 depict three variants of the same cell.Grandparent FIGS. 1889(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1891-1893 depict three variants of the same cell.Grandparent FIGS. 1892(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1894-1896 depict three variants of the same cell.Grandparent FIGS. 1895(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1897-1899 depict three variants of the same cell.Grandparent FIGS. 1898(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1900-1902 depict three variants of the same cell.Grandparent FIGS. 1901(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1903-1905 depict three variants of the same cell.Grandparent FIGS. 1904(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1906-1908 depict three variants of the same cell.Grandparent FIGS. 1907(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1909-1911 depict three variants of the same cell.Grandparent FIGS. 1910(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1912-1914 depict three variants of the same cell.Grandparent FIGS. 1913(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1915-1917 depict three variants of the same cell.Grandparent FIGS. 1916(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1918-1920 depict three variants of the same cell.Grandparent FIGS. 1919(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1921-1923 depict three variants of the same cell.Grandparent FIGS. 1922(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1924-1926 depict three variants of the same cell.Grandparent FIGS. 1925(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1927-1929 depict three variants of the same cell.Grandparent FIGS. 1928(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1930-1932 depict three variants of the same cell.Grandparent FIGS. 1931(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1933-1935 depict three variants of the same cell.Grandparent FIGS. 1934(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1936-1938 depict three variants of the same cell.Grandparent FIGS. 1937(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1939-1941 depict three variants of the same cell.Grandparent FIGS. 1940(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1943-1944 depict two variants of the same cell.Grandparent FIGS. 1943(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1945-1947 depict three variants of the same cell.Grandparent FIGS. 1946(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1948-1950 depict three variants of the same cell.Grandparent FIGS. 1949(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1951-1953 depict three variants of the same cell.Grandparent FIGS. 1952(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1954-1956 depict three variants of the same cell.Grandparent FIGS. 1955(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1957-1959 depict three variants of the same cell.Grandparent FIGS. 1958(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1960-1962 depict three variants of the same cell.Grandparent FIGS. 1961(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1963-1965 depict three variants of the same cell.Grandparent FIGS. 1964(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1966-1968 depict three variants of the same cell.Grandparent FIGS. 1967(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1969-1971 depict three variants of the same cell.Grandparent FIGS. 1970(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1972-1974 depict three variants of the same cell.Grandparent FIGS. 1973(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1975-1977 depict three variants of the same cell.Grandparent FIGS. 1976(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1978-1980 depict three variants of the same cell.Grandparent FIGS. 1979(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1981-1983 depict three variants of the same cell.Grandparent FIGS. 1982(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1984-1986 depict three variants of the same cell.Grandparent FIGS. 1985(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1987-1989 depict three variants of the same cell.Grandparent FIGS. 1988(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1990-1993 depict variants of the same cell.Grandparent FIGS. 1991(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1994-1996 depict three variants of the same cell.Grandparent FIGS. 1995(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 1997-1999 depict three variants of the same cell.Grandparent FIGS. 1998(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2000-2002 depict three variants of the same cell.Grandparent FIGS. 2001(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2003-2005 depict three variants of the same cell.Grandparent FIGS. 2003(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2006-2008 depict three variants of the same cell.Grandparent FIGS. 2007(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2009-2011 depict three variants of the same cell.Grandparent FIGS. 2010(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2012-2014 depict three variants of the same cell.Grandparent FIGS. 2013(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2015-2017 depict three variants of the same cell.Grandparent FIGS. 2016(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2018-2020 depict three variants of the same cell.Grandparent FIGS. 2019(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2021-2023 depict three variants of the same cell.Grandparent FIGS. 2022(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2024-2026 depict three variants of the same cell.Grandparent FIGS. 2025(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2027-2029 depict three variants of the same cell.Grandparent FIGS. 2028(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2030-2032 depict three variants of the same cell.Grandparent FIGS. 2031(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2033-2035 depict three variants of the same cell.Grandparent FIGS. 2034(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2036-2038 depict three variants of the same cell.Grandparent FIGS. 2037(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2039-2041 depict three variants of the same cell.Grandparent FIGS. 2040(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2042-2044 depict three variants of the same cell.Grandparent FIGS. 2043(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2045-2047 depict three variants of the same cell.Grandparent FIGS. 2046(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2048-2050 depict three variants of the same cell.Grandparent FIGS. 2049(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2051-2053 depict three variants of the same cell.Grandparent FIGS. 2052(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2054-2056 depict three variants of the same cell.Grandparent FIGS. 2055(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2057-2059 depict three variants of the same cell.Grandparent FIGS. 2058(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2111-2113 depict three variants of the same cell.Grandparent FIGS. 2112(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2114-2116 depict three variants of the same cell.Grandparent FIGS. 2115(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2117-2118 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 2219-2220 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 2121-22123 depict three variants of the same cell.Grandparent FIGS. 2122(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2124-2126 depict three variants of the same cell.Grandparent FIGS. 2125(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2127-2129 depict three variants of the same cell.Grandparent FIGS. 2128(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2130-2132 depict three variants of the same cell.Grandparent FIGS. 2131(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2133-2135 depict three variants of the same cell.Grandparent FIGS. 2133(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2136-2138 depict two variants of the same cell.Grandparent FIGS. 2136(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2138-2139 depict two variants of the same cell.Grandparent FIGS. 2138(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2140-2141 depict two variants of the same cell.Grandparent FIGS. 2140(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2142-2143 depict two variants of the same cell.Grandparent FIGS. 2142(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2144-2145 depict two variants of the same cell.Grandparent FIGS. 2144(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2146-2147 depict two variants of the same cell.Grandparent FIGS. 2146(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2148-2150 depict three variants of the same cell.Grandparent FIGS. 2148(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2151-2153 depict three variants of the same cell.Grandparent FIGS. 2151(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2154-2156 depict three variants of the same cell.Grandparent FIGS. 2154(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2157-2159 depict three variants of the same cell.Grandparent FIGS. 2158(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2160-2162 depict three variants of the same cell.Grandparent FIGS. 2161(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2163-2165 depict three variants of the same cell.Grandparent FIGS. 2164(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2166-2168 depict three variants of the same cell.Grandparent FIGS. 2167(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2171-2173 depict three variants of the same cell.Grandparent FIGS. 2172(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2174-2176 depict three variants of the same cell.Grandparent FIGS. 2175(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2177-2179 depict three variants of the same cell.Grandparent FIGS. 2178(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2180-2182 depict three variants of the same cell.Grandparent FIGS. 2181(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2183-2185 depict three variants of the same cell.Grandparent FIGS. 2184(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2186-2188 depict three variants of the same cell.Grandparent FIGS. 2187(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2189-2191 depict three variants of the same cell.Grandparent FIGS. 2190(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2192-2194 depict three variants of the same cell.Grandparent FIGS. 2193(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2195-2197 depict three variants of the same cell.Grandparent FIGS. 2196(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2200-2202 depict three variants of the same cell.Grandparent FIGS. 2201(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2203-2205 depict three variants of the same cell.Grandparent FIGS. 2204(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2206-2208 depict three variants of the same cell.Grandparent FIGS. 2207(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2209-2211 depict three variants of the same cell.Grandparent FIGS. 2210(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2212-2214 depict three variants of the same cell.Grandparent FIGS. 2213(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2215-2217 depict three variants of the same cell.Grandparent FIGS. 2216(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2218-2220 depict three variants of the same cell.Grandparent FIGS. 2219(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2221-2223 depict three variants of the same cell.Grandparent FIGS. 2222(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2224-2226 depict three variants of the same cell.Grandparent FIGS. 2225(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2227-2229 depict three variants of the same cell.Grandparent FIGS. 2228(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2230-2232 depict three variants of the same cell.Grandparent FIGS. 2231(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2233-2235 depict three variants of the same cell.Grandparent FIGS. 2234(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2236-2238 depict three variants of the same cell.Grandparent FIGS. 2237(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2239-2241 depict three variants of the same cell.Grandparent FIGS. 2240(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2242-2244 depict three variants of the same cell.Grandparent FIGS. 2243(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2245-2247 depict three variants of the same cell.Grandparent FIGS. 2246(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2248-2250 depict three variants of the same cell.Grandparent FIGS. 2249(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2251-2253 depict three variants of the same cell.Grandparent FIGS. 2252(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2254-2256 depict three variants of the same cell.Grandparent FIGS. 2255(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2257-2259 depict three variants of the same cell.Grandparent FIGS. 2258(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2260-2262 depict three variants of the same cell.Grandparent FIGS. 2261(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2263-2265 depict three variants of the same cell.Grandparent FIGS. 2264(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2266-2268 depict three variants of the same cell.Grandparent FIGS. 2267(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2269-2271 depict three variants of the same cell.Grandparent FIGS. 2270(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2272-2274 depict three variants of the same cell.Grandparent FIGS. 2273(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2275-2277 depict three variants of the same cell.Grandparent FIGS. 2276(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2278-2280 depict three variants of the same cell.Grandparent FIGS. 2279(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2281-2282 depict two variants of the same cell.Grandparent FIGS. 2282(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2283-2285 depict three variants of the same cell.Grandparent FIGS. 2284(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2286-2288 depict three variants of the same cell.Grandparent FIGS. 2287(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2289-2290 depict two variants of the same cell.Grandparent FIGS. 2290(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2291-2293 depict three variants of the same cell.Grandparent FIGS. 2292(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2294-2296 depict three variants of the same cell.Grandparent FIGS. 2295(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2297-2299 depict three variants of the same cell.Grandparent FIGS. 2298(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2300-2302 depict three variants of the same cell.Grandparent FIGS. 2301(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2303-2305 depict three variants of the same cell.Grandparent FIGS. 2304(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2306-2308 depict three variants of the same cell.Grandparent FIGS. 2307(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2309-2311 depict three variants of the same cell.Grandparent FIGS. 2310(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2312-2314 depict three variants of the same cell.Grandparent FIGS. 2313(A)-(B) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2345-2347 depict three variants of the same cell.Grandparent FIGS. 2346(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2348-2350 depict three variants of the same cell.Grandparent FIGS. 2349(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2351-2353 depict three variants of the same cell.Grandparent FIGS. 2351(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2354-2356 depict three variants of the same cell.Grandparent FIGS. 2354(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2357-2359 depict three variants of the same cell.Grandparent FIGS. 2358(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2360-2362 depict three variants of the same cell.Grandparent FIGS. 2361(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2363-2365 depict three variants of the same cell.Grandparent FIGS. 2364(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2366-2368 depict three variants of the same cell.Grandparent FIGS. 2367(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2369-2371 depict three variants of the same cell.Grandparent FIGS. 2370(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2372-2374 depict three variants of the same cell.Grandparent FIGS. 2373(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2375-2377 depict three variants of the same cell.Grandparent FIGS. 2376(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2378-2380 depict three variants of the same cell.Grandparent FIGS. 2379(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2381-2383 depict three variants of the same cell.Grandparent FIGS. 2382(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2384-2386 depict three variants of the same cell.Grandparent FIGS. 2385(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2387-2389 depict three variants of the same cell.Grandparent FIGS. 2388(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2390-2392 depict three variants of the same cell.Grandparent FIGS. 2391(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2399-2401 depict three variants of the same cell.Grandparent FIGS. 2399(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2402-2403 depict two variants of the same cell. Thefigure set represents intentionally misaligned conditions.

Grandparent FIGS. 2404-2406 depict three variants of the same cell.Grandparent FIGS. 2405(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2407-2409 depict three variants of the same cell.Grandparent FIGS. 2408(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2410-2412 depict three variants of the same cell.Grandparent FIGS. 2411(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2413-2415 depict three variants of the same cell.Grandparent FIGS. 2414(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2416-2418 depict three variants of the same cell.Grandparent FIGS. 2417(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2419-2421 depict three variants of the same cell.Grandparent FIGS. 2420(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2422-2424 depict three variants of the same cell.Grandparent FIGS. 2423(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2425-2427 depict three variants of the same cell.Grandparent FIGS. 2426(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2428-2430 depict three variants of the same cell.Grandparent FIGS. 2429(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2431-2433 depict three variants of the same cell.Grandparent FIGS. 2432(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2434-2436 depict three variants of the same cell.Grandparent FIGS. 2435(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2437-2439 depict three variants of the same cell.Grandparent FIGS. 2438(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2442-2444 depict three variants of the same cell.Grandparent FIGS. 2443(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2445-2447 depict three variants of the same cell.Grandparent FIGS. 2446(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2448-2450 depict three variants of the same cell.Grandparent FIGS. 2449(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2451-2453 depict three variants of the same cell.Grandparent FIGS. 2452(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2454-2456 depict three variants of the same cell.Grandparent FIGS. 2455(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 2457-2459 depict three variants of the same cell.Grandparent FIGS. 2458(A)-(C) show the nominal case, whereas the otherfigures represent intentionally misaligned conditions.

Grandparent FIGS. 203-223, 236-286, 389-397, 404-409, 485-494, 546-548,552-554, 621-632, 682, 691, 731-734, 762-785, 848-859, 880-903,1014-1040, 1096-1119, 1189-1200, 1222-1224, 1234-1238, 1249-1263,1543-1548, 1687-1698, 1870-1872, 1876-1881, 1885-1902, 1912-1947,1954-1980, 1984-1993, 2003-2005, 2157-2314, 2343-2344, 2357-2374, and2404-2461 show depictions of NCEM-enabled fill cells without NCEM pads.Persons skilled in the art will understand that pads of any design(e.g., FIGS. 9A-9F and Grandparent FIGS. 9G-9IIII, etc.) would be added,either at the left edge with a corresponding leftward extension of thesupply rails, or overlying or partially overlying the depicted portionof the cells.

Certain of the claims that follow may contain one or moremeans-plus-function limitations of the form, “a <cell name> means forenabling NC detection of a GATE-tip-to-tip short.” It is applicant'sintent that such limitations be construed, pursuant to 35 U.S.C. §112(f), as “the structure of the named cell, or an equivalent structure,that enables detection of a GATE-tip-to-tip short by non-contactmeasurement.”

Additionally, certain of the claims that follow may contain one or morestep-plus-function limitations of the form, “a <cell name> step forenabling NC detection of a GATE-tip-to-tip short.” It is applicant'sintent that such limitations be construed, pursuant to 35 U.S.C. §112(f), as “enabling voltage contrast detection of a GATE-tip-to-tipshort by patterning an instance of the named cell, or an equivalentcell.”

While the invention has been illustrated with respect to one or morespecific implementations, numerous alterations and/or modifications canbe made to the illustrated examples without departing from the spiritand scope of the appended claims. In addition, while a particularfeature of the invention may have been disclosed with respect to onlyone of several implementations, such feature may be combined with one ormore other features of the other implementations as may be desired andadvantageous for any given or particular application. Furthermore, tothe extent that the terms “including,” “includes,” “having,” “has,”“with,” or variants thereof are used in either the detailed descriptionor the claims, such terms are intended to be inclusive in a mannersimilar to the term “comprising.” As used herein, the phrase “Xcomprises one or more of A, B, and C” means that X can include any ofthe following: either A, B, or C alone; or combinations of two, such asA and B, B and C, and A and C; or combinations of three A, B and C.

What we claim in this application is:
 1. A process for making asemiconductor wafer that includes at least a source/drain (AA) layer, asource/drain contact (AACNT) layer, a source/drain silicide (TS) layer,a gate (GATE) layer, and a gate contact (GATECNT) layer, the processcomprising at least: (i) creating a first design of experiments (DOE) byinstantiating, on the wafer, at least first and second non-contactelectrical measurement (NCEM)-enabled fill cells in a standard cellform, with first and second supply rails that extend horizontally acrossthe cells and uniformly spaced GATE stripes that extend verticallyacross the cells, said creating further including instantiating, on thewafer, test gap patterning that comprises first and second features,arranged in a side-to-side short configuration, with the first featureelectrically connected to an NCEM pad and the second featureelectrically connected to a permanent or virtual ground, therebyenabling detection of an unintended short or leakage between the firstand second features using a non-contact (NC) measurement at the NCEMpad, said creating further including providing at least one patterningdifference between the first and second NCEM-enabled fill cells thatresults in a different probability of detecting shorts or leakagesbetween the first and second features of the first NCEM-enabled fillcell and the first and second features of the second NCEM-enabled fillcell; and, (ii) creating a second DOE by instantiating, on the wafer, atleast first and second NCEM-enabled fill cells in a standard cell form,with first and second supply rails that extend horizontally across thecells and uniformly spaced GATE stripes that extend vertically acrossthe cells, said creating further including instantiating, on the wafer,test gap patterning that comprises first and second features, arrangedin a chamfer short configuration, with the first feature electricallyconnected to an NCEM pad and the second feature electrically connectedto a permanent or virtual ground, thereby enabling detection of anunintended short or leakage between the first and second features usinga NC measurement at the NCEM pad, said creating further includingproviding at least one patterning difference between the first andsecond NCEM-enabled fill cells that results in a different probabilityof detecting shorts or leakages between the first and second features ofthe first NCEM-enabled fill cell and the first and second features ofthe second NCEM-enabled fill cell; wherein creating the first and secondDOEs further comprises instantiating all of the NCEM-enabled fill cellsin the first and second DOEs in a compatible standard cell form, withidentical spacing between the first and second supply rails andidentical spacing between adjacent GATE stripes.
 2. A process, asdefined in claim 1, further comprising obtaining first NC measurementsfrom the first DOE.
 3. A process, as defined in claim 2, furthercomprising using, at least in part, the first NC measurements toselectively perform additional processing, metrology or inspection stepson the wafer, and/or on other wafer(s) currently being manufactured. 4.A process, as defined in claim 3, further comprising obtaining second NCmeasurements from the second DOE.
 5. A process, as defined in claim 4,further comprising using, at least in part, the second NC measurementsto selectively perform additional processing, metrology or inspectionsteps on the wafer, and/or on other wafer(s) currently beingmanufactured.
 6. A process, as defined in claim 1, further comprisingobtaining first NC measurements from the first DOE and obtaining secondNC measurements from the second DOE.
 7. A process, as defined in claim6, further comprising using, at least in part, the first NC measurementsand the second NC measurements to selectively perform additionalprocessing, metrology or inspection steps on the wafer, and/or on otherwafer(s) currently being manufactured.
 8. A process, as defined in claim1, for making a semiconductor wafer that additionally includes at leasta via to interconnect stack (V0) layer, a first wiring (M1) layer, asecond wiring (M2) layer, an M1-to-M2 via (V1) layer, a third wiring(M3) layer, an M2-to-M3 via (V2) layer, a fourth wiring (M4) layer, anM3-to-M4 via (V3) layer, a fifth wiring (M5) layer, and an M4-to-M5 via(V4) layer, the process further including instantiating, on the wafer,at least one additional NCEM-enabled fill cell selected from the listconsisting of: AA-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-tip-short-configured, NCEM-enabled fill cells;TS-tip-to-tip-short-configured, NCEM-enabled fill cells;GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-tip-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V0-tip-to-tip-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-tip-short-configured, NCEM-enabled fill cells;V1-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-tip-to-tip-short-configured, NCEM-enabled fill cells;V2-tip-to-tip-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-tip-short-configured, NCEM-enabled fill cells;AA-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATE-AA-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;TS-GATECNT-tip-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-tip-to-side-short-configured, NCEM-enabled fill cells;M1-tip-to-side-short-configured, NCEM-enabled fill cells;V0-tip-to-side-short-configured, NCEM-enabled fill cells;M1-V0-tip-to-side-short-configured, NCEM-enabled fill cells;V1-M1-tip-to-side-short-configured, NCEM-enabled fill cells;V1-tip-to-side-short-configured, NCEM-enabled fill cells;M2-tip-to-side-short-configured, NCEM-enabled fill cells;M2-V1-tip-to-side-short-configured, NCEM-enabled fill cells;V2-M2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-tip-to-side-short-configured, NCEM-enabled fill cells;V2-tip-to-side-short-configured, NCEM-enabled fill cells;M3-V2-tip-to-side-short-configured, NCEM-enabled fill cells;AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-AA-side-to-side-short-configured, NCEM-enabled fill cells;AACNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fill cells;TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-side-to-side-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fill cells;M1-side-to-side-short-configured, NCEM-enabled fill cells;V0-side-to-side-short-configured, NCEM-enabled fill cells;M1-V0-side-to-side-short-configured, NCEM-enabled fill cells;V1-M1-side-to-side-short-configured, NCEM-enabled fill cells;V1-side-to-side-short-configured, NCEM-enabled fill cells;M2-side-to-side-short-configured, NCEM-enabled fill cells;M2-V1-side-to-side-short-configured, NCEM-enabled fill cells;V2-M2-side-to-side-short-configured, NCEM-enabled fill cells;M3-side-to-side-short-configured, NCEM-enabled fill cells;V2-side-to-side-short-configured, NCEM-enabled fill cells;M3-V2-side-to-side-short-configured, NCEM-enabled fill cells;AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-L-shape-interlayer-short-configured, NCEM-enabled fill cells;AACNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-AA-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATE-TS-L-shape-interlayer-short-configured, NCEM-enabled fill cells;GATECNT-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; GATECNT-AACNT-L-shape-interlayer-short-configured, NCEM-enabledfill cells; V0-AA-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-TS-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATE-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V0-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-AACNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-GATECNT-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V1-V0-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-M1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-V1-L-shape-interlayer-short-configured, NCEM-enabled fillcells; V2-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-M2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; M3-V2-L-shape-interlayer-short-configured, NCEM-enabled fillcells; AA-diagonal-short-configured, NCEM-enabled fill cells;TS-diagonal-short-configured, NCEM-enabled fill cells;AACNT-diagonal-short-configured, NCEM-enabled fill cells;AACNT-AA-diagonal-short-configured, NCEM-enabled fill cells;GATE-diagonal-short-configured, NCEM-enabled fill cells;GATE-AACNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-GATE-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-diagonal-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-diagonal-short-configured, NCEM-enabled fill cells;M1-diagonal-short-configured, NCEM-enabled fill cells;V0-diagonal-short-configured, NCEM-enabled fill cells;M1-V0-diagonal-short-configured, NCEM-enabled fill cells;V1-M1-diagonal-short-configured, NCEM-enabled fill cells;V1-diagonal-short-configured, NCEM-enabled fill cells;M2-diagonal-short-configured, NCEM-enabled fill cells;M2-V1-diagonal-short-configured, NCEM-enabled fill cells;M3-diagonal-short-configured, NCEM-enabled fill cells;V2-M2-diagonal-short-configured, NCEM-enabled fill cells;V2-diagonal-short-configured, NCEM-enabled fill cells;M3-V2-diagonal-short-configured, NCEM-enabled fill cells;AA-corner-short-configured, NCEM-enabled fill cells;AACNT-corner-short-configured, NCEM-enabled fill cells;AACNT-AA-corner-short-configured, NCEM-enabled fill cells;GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-GATE-corner-short-configured, NCEM-enabled fill cells;GATECNT-TS-corner-short-configured, NCEM-enabled fill cells;GATECNT-corner-short-configured, NCEM-enabled fill cells;GATECNT-AACNT-corner-short-configured, NCEM-enabled fill cells;M1-corner-short-configured, NCEM-enabled fill cells;V0-corner-short-configured, NCEM-enabled fill cells;M1-V0-corner-short-configured, NCEM-enabled fill cells;V1-M1-corner-short-configured, NCEM-enabled fill cells;V1-corner-short-configured, NCEM-enabled fill cells;M2-corner-short-configured, NCEM-enabled fill cells;M2-V1-corner-short-configured, NCEM-enabled fill cells;M3-corner-short-configured, NCEM-enabled fill cells;V2-M2-corner-short-configured, NCEM-enabled fill cells;V2-corner-short-configured, NCEM-enabled fill cells;M3-V2-corner-short-configured, NCEM-enabled fill cells;GATE-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATE-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;GATECNT-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AA-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-TS-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATE-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-GATECNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;M1-AACNT-interlayer-overlap-short-configured, NCEM-enabled fill cells;V1-V0-interlayer-overlap-short-configured, NCEM-enabled fill cells;M2-M1-interlayer-overlap-short-configured, NCEM-enabled fill cells;V2-V1-interlayer-overlap-short-configured, NCEM-enabled fill cells;M3-M2-interlayer-overlap-short-configured, NCEM-enabled fill cells;V0-GATECNT-via-chamfer-short-configured, NCEM-enabled fill cells;V0-AACNT-via-chamfer-short-configured, NCEM-enabled fill cells;V1-M1-via-chamfer-short-configured, NCEM-enabled fill cells;V2-M2-via-chamfer-short-configured, NCEM-enabled fill cells;V0-merged-via-short-configured, NCEM-enabled fill cells;V1-merged-via-short-configured, NCEM-enabled fill cells;V2-merged-via-short-configured, NCEM-enabled fill cells;AA-snake-open-configured, NCEM-enabled fill cells;TS-snake-open-configured, NCEM-enabled fill cells;AACNT-snake-open-configured, NCEM-enabled fill cells;GATE-snake-open-configured, NCEM-enabled fill cells;GATECNT-snake-open-configured, NCEM-enabled fill cells;V0-snake-open-configured, NCEM-enabled fill cells;M1-snake-open-configured, NCEM-enabled fill cells;V1-snake-open-configured, NCEM-enabled fill cells;M2-snake-open-configured, NCEM-enabled fill cells;V2-snake-open-configured, NCEM-enabled fill cells;M3-snake-open-configured, NCEM-enabled fill cells;AA-stitch-open-configured, NCEM-enabled fill cells;TS-stitch-open-configured, NCEM-enabled fill cells;AACNT-stitch-open-configured, NCEM-enabled fill cells;GATECNT-stitch-open-configured, NCEM-enabled fill cells;V0-stitch-open-configured, NCEM-enabled fill cells;M1-stitch-open-configured, NCEM-enabled fill cells;V1-stitch-open-configured, NCEM-enabled fill cells;M2-stitch-open-configured, NCEM-enabled fill cells;V2-stitch-open-configured, NCEM-enabled fill cells;M3-stitch-open-configured, NCEM-enabled fill cells;AACNT-TS-via-open-configured, NCEM-enabled fill cells;AACNT-AA-via-open-configured, NCEM-enabled fill cells;TS-AA-via-open-configured, NCEM-enabled fill cells;GATECNT-GATE-via-open, NCEM-enabled fill cells;V0-GATECNT-via-open-configured, NCEM-enabled fill cells;V0-AA-via-open-configured, NCEM-enabled fill cells;V0-TS-via-open-configured, NCEM-enabled fill cells;V0-AACNT-via-open-configured, NCEM-enabled fill cells;V0-GATE-via-open-configured, NCEM-enabled fill cells;V0-via-open-configured, NCEM-enabled fill cells;M1-V0-via-open-configured, NCEM-enabled fill cells;V1-M1-via-open-configured, NCEM-enabled fill cells;V1-M2-via-open-configured, NCEM-enabled fill cells;M1-GATECNT-via-open-configured, NCEM-enabled fill cells;M1-AANCT-via-open-configured, NCEM-enabled fill cells;V2-M2-via-open-configured, NCEM-enabled fill cells;V2-M3-via-open-configured, NCEM-enabled fill cells;M1-metal-island-open-configured, NCEM-enabled fill cells;M2-metal-island-open-configured, NCEM-enabled fill cells;M3-metal-island-open-configured, NCEM-enabled fill cells;V0-merged-via-open-configured, NCEM-enabled fill cells;V0-AACNT-merged-via-open-configured, NCEM-enabled fill cells;V0-GATECNT-merged-via-open-configured, NCEM-enabled fill cells;V1-merged-via-open-configured, NCEM-enabled fill cells;V2-merged-via-open-configured, NCEM-enabled fill cells;V1-M1-merged-via-open-configured, NCEM-enabled fill cells; and,V2-M2-merged-via-open-configured, NCEM-enabled fill cells.
 9. A process,as defined in claim 1, wherein each of the first and second DOEsincludes at least three different NCEM-enabled fill cells.
 10. Aprocess, as defined in claim 1, wherein each of the first and secondDOEs includes at least five different NCEM-enabled fill cells.
 11. Aprocess, as defined in claim 1, wherein at least one of the first and/orsecond DOE(s) includes at least ten different NCEM-enabled fill cells.12. A process, as defined in claim 1, wherein at least one of the firstand/or second DOE(s) includes at least twenty different NCEM-enabledfill cells.
 13. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise TS-GATE-side-to-side-short-configured, NCEM-enabled fill cells.14. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise AACNT-GATE-side-to-side-short-configured, NCEM-enabled fillcells.
 15. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise GATE-side-to-side-short-configured, NCEM-enabled fill cells.16. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise M1-side-to-side-short-configured, NCEM-enabled fill cells. 17.A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise AACNT-side-to-side-short-configured, NCEM-enabled fill cells.18. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise GATECNT-GATE-side-to-side-short-configured, NCEM-enabled fillcells.
 19. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise GATECNT-side-to-side-short-configured, NCEM-enabled fill cells.20. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise GATECNT-AACNT-side-to-side-short-configured, NCEM-enabled fillcells.
 21. A process, as defined in claim 1, wherein theside-to-side-short-configured, NCEM-enabled fill cells of the first DOEcomprise M1-V0-side-to-side-short-configured, NCEM-enabled fill cells.22. A process, as defined in claim 1, wherein thechamfer-short-configured, NCEM-enabled fill cells of the second DOEcomprise V0-AACNT-chamfer-short-configured, NCEM-enabled fill cells. 23.A process, as defined in claim 1, wherein the chamfer-short-configured,NCEM-enabled fill cells of the second DOE compriseV3-M3-chamfer-short-configured, NCEM-enabled fill cells.